K4A4G165WD-BCPB vs K4A4G165WE-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WD-BCPB disebabkan oleh Samsung Electronics dan K4A4G165WE-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WD-BCPB | K4A4G165WE-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | — |
| Kadar Data | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Kemasan | FBGA-96 | FBGA-96 (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Die Generation | D-die | E-die |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | BL8 (JEDEC DDR4) |
| Antaramuka | DDR4 (synchronous, source-synchronous strobe) | Parallel, x16 |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Status RoHS | Compliant (lead-free suffix) | Compliant (per JLCPCB listing) |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Saiz Ingatan | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Bank Group Architecture | — | Yes (DDR4) |