K4A4G165WD-BCPB vs K4A4G165WE-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics at K4A4G165WE-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCPB | K4A4G165WE-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | — |
| Rate ng Data | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Packhaging | FBGA-96 | FBGA-96 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Die Generation | D-die | E-die |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | BL8 (JEDEC DDR4) |
| Interface | DDR4 (synchronous, source-synchronous strobe) | Parallel, x16 |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Tindminan RoHS | Compliant (lead-free suffix) | Compliant (per JLCPCB listing) |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Laki ng Memory | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Bank Group Architecture | — | Yes (DDR4) |