K4A8G085WB-BCTD vs K4A8G085WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCTD disebabkan oleh Samsung Electronics dan K4A8G085WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ AktifSamsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | K4A8G085WB-BCTD | K4A8G085WC-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Harga Unit (USD) | $8.53 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2666 Mbps | 2666 Mbps (PC4-2133) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Die Revision | B-die | — |
| Kemasan | FBGA-78 (78-ball TFBGA) | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 (chop 4) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Ciri-ciri | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Jenis Antaramuka | — | Synchronous, parallel |