K4A8G085WB-BCTD vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ ActiveSamsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | K4A8G085WB-BCTD | K4A8G085WC-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Last Time Buy |
| Unit Price (USD) | $8.53 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 2666 Mbps (PC4-2133) |
| Supply Voltage | 1.2 V | — |
| Die Revision | B-die | — |
| Package | FBGA-78 (78-ball TFBGA) | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 (chop 4) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Features | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Interface Type | — | Synchronous, parallel |