K4A8G085WB-BCTD vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD β ActiveSamsung Electronics
K4A8G085WC-BCTD
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD β Last Time BuySpecification Comparison
| Parameter | K4A8G085WB-BCTD | K4A8G085WC-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Last_time_buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $50.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) | β |
| Supply Voltage | 1.2 V | β |
| Data Rate | 3200 Mbps (PC4-25600) | 2666 Mbps (PC4-2133) |
| Speed Bin | CL22-22-22 | β |
| Package | FBGA-78 (TFBGA) | 78-ball FBGA (78FBGA) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C |
| Burst Length | 8 (BL8) | 8 (chop 4) |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC Function | Yes | Yes |
| Dynamic On-Chip Termination | Yes | β |
| Data Mask Function | Yes | β |
| JESD-30 Code | R-PBGA-B78 | β |
| Number of Terminals | 78 | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Density | β | 8 Gb |
| Organization | β | 1G x 8 |
| Supply Voltage (VDD/VDDQ) | β | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | β | 0.8 mm |
| Standard Operating Temp Range | β | 0C to +85C |
| Dynamic ODT | β | Yes |
| Data Mask | β | Yes |
| Interface Type | β | Synchronous, parallel |
| Mounting Type | β | Surface Mount |