K4A8G085WC-BCPB vs K4A8G085WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G085WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ Akhir HayatSamsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WC-BCPB | K4A8G085WB-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Harga Unit (USD) | — | $8.53 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2133 Mbps | 2666 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0 C to +85 C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78FBGA | FBGA-78 (78-ball TFBGA) |
| Number of Terminals | 78 | — |
| Maximum Seated Height | 1.2 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | DDR4-2133 | — |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | ZQ calibration, CRC, CA parity, asynchronous reset |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Die Revision | [DATA_NEEDED: die revision] | B-die |
| Standard Package Quantity | [DATA_NEEDED: standard package quantity] | — |
| Bank Structure | — | 16 banks, 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |