K4A8G085WC-BIWE vs MT40A1G8WE-075E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BIWE disebabkan oleh Samsung Electronics dan MT40A1G8WE-075E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BIWE | MT40A1G8WE-075E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 3200 Mbps | 2666 MT/s (1.33 GHz) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 78-FBGA | 78-ball FBGA (8x12mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | 8 and 4 |
| Latensi CAS | 22 (CL22) | Programmable |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Saiz Ingatan | — | 8 Gbit (1G x 8) |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | — | -40°C to +105°C (industrial) |
| Refresh Time (8192 cycles) | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo-open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Optional (AIT variant) |