K4A8G165WB-BCPB vs K4AAG165WA-BCPB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCPB disebabkan oleh Samsung Electronics dan K4AAG165WA-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB ✓ Aktif
Samsung Electronics
K4AAG165WA-BCPB K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4AAG165WA-BCPB ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G165WB-BCPB K4AAG165WA-BCPB
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM Volatile DRAM (DDR4 SDRAM)
Density 8 Gb 16 Gb
Organisasi 512M x 16 1G x 16
Kadar Data 2133 Mbps 3200 Mbps
Supply Voltage (VDD) 1.2 V 1.2 V
I/O Voltage (VDDQ) 1.2 V —
Suhu Operasi 0C to +85C [DATA_NEEDED: operating temperature for BCPB grade]
Kemasan 96FBGA (TFBGA) FBGA-96
Number of Terminals 96 —
Package Shape Rectangular, bottom terminal position —
Die Generation 8Gb B-die —
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka DDR4 (synchronous, double data rate) —
Bank Groups DDR4 bank-group architecture —
Status RoHS Compliant (per Lisleapex listing) [DATA_NEEDED: RoHS status]
Refresh [DATA_NEEDED: refresh specification] —
Technology — DDR4
Interface Voltage (VDDQ) — 1.2 V
Memory Format — DRAM
Packaging — Tray
Product Status — Active
Power Consumption — 25% lower than DDR3 (per Samsung DDR4 family)
Bank Group Architecture — Yes (DDR4 internal bank groups)
On-Die Termination (ODT) — Yes
Max Capacity Family — Up to 32GB component (Samsung DDR4 family)

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