K4A8G165WC-BCPB vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WC-BCPB | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM (DRAM, volatile) |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Kadar Data | DDR4-2133 (2133 Mbps/pin) | 2400 Mbps/pin (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antaramuka | DDR4 (16-bit data bus) | Parallel (DDR4 SDRAM bus) |
| Kemasan | 96-ball FBGA (TFBGA) | 96-ball FBGA (PBGA96) |
| Die Generation | C-die (1Y nm class) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | -40C to +95C |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Aras MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |