K4AAG085WM-BCWE vs K4AAG085WA-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCWE disebabkan oleh Samsung Electronics dan K4AAG085WA-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WM-BCWE | K4AAG085WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0C to +85C | 0 C to 85 C |
| Kemasan | 78FBGA | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (JEDEC-standard) | JEDEC DDR4 |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | Main memory / embedded DRAM |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Manufacturer | — | Samsung Electronics |