K4AAG085WM-BCWE vs K4AAG085WA-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCWE sa pamamagitan ng Samsung Electronics at K4AAG085WA-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WM-BCWE - 16Gb DDR4 3200Mbps 78FBGA | Samsung
K4AAG085WM-BCWE ✓ NakahandaSamsung Electronics
K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung
K4AAG085WA-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCWE | K4AAG085WA-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasyon | 2G x 8 | 2G x 8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | 0 C to 85 C |
| Packhaging | 78FBGA | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | JEDEC DDR4 |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | Main memory / embedded DRAM |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Manufacturer | — | Samsung Electronics |