K4B4G1646E-BYK0 vs H5TC4G63CFR-H9A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics dan H5TC4G63CFR-H9A disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYK0 | H5TC4G63CFR-H9A |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | — |
| Kadar Data | DDR3-1600 (800 MHz) | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Suhu Operasi | 0°C to +95°C (TC) | — |
| Latensi CAS | 11 (CL-tRCD-tRP) | [DATA_NEEDED: CAS latency] |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Density | — | 4Gb (4294967296 bit) |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Operating temperature range] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |