K4B4G1646E-BYK0 vs H5TC4G63CFR-H9A Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics at H5TC4G63CFR-H9A sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYK0 | H5TC4G63CFR-H9A |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | — |
| Rate ng Data | DDR3-1600 (800 MHz) | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| Packhaging | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to +95°C (TC) | — |
| Latensya ng CAS | 11 (CL-tRCD-tRP) | [DATA_NEEDED: CAS latency] |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Density | — | 4Gb (4294967296 bit) |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Operating temperature range] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |