K4RAH086VB-BCWM vs K4RAH086VB-BIWM Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VB-BCWM disebabkan oleh Samsung Electronics dan K4RAH086VB-BIWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4RAH086VB-BCWM | K4RAH086VB-BIWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $44.55 | — |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Saiz Ingatan | 16 Gb | — |
| Organisasi | 2G x 8 | [DATA_NEEDED: organization x4/x8] |
| Kadar Data | 5600 Mbps | 5600 Mbps per pin |
| Tegangan Pemberi Arus | 1.1 V | [DATA_NEEDED: VDD voltage] |
| Antaramuka | DDR5 (parallel) | — |
| Kemasan | FBGA-82 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Suhu Operasi | Commercial temperature range (per datasheet) | [DATA_NEEDED: temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Status Lingkungan Hidup | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |