K4RAH086VB-BCWM vs K4RAH086VB-BIWM 比較
詳細並排比較 K4RAH086VB-BCWM 由 Samsung Electronics 與 K4RAH086VB-BIWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 啟用中
規格比較
| 參數 | K4RAH086VB-BCWM | K4RAH086VB-BIWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | — |
| 組織 | 2G x 8 | [DATA_NEEDED: organization x4/x8] |
| 資料速率 | 5600 Mbps | 5600 Mbps per pin |
| 供應電壓 | 1.1 V | [DATA_NEEDED: VDD voltage] |
| 介面 | DDR5 (parallel) | — |
| 封裝 | FBGA-82 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| 工作溫度 | Commercial temperature range (per datasheet) | [DATA_NEEDED: temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| 生命週期狀態 | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |