K4RAH165VB-BCWM vs PDRQL8KCBF12-00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH165VB-BCWM disebabkan oleh Samsung Electronics dan PDRQL8KCBF12-00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4RAH165VB-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Saiz Ingatan | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Tegangan Pemberi Arus | 1.1 V | 1.1 V |
| Technology | DDR5 | — |
| Kemasan | FBGA-106 | FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | Yes |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Status RoHS | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gb |
| Organisasi | — | 2G x 8 |
| Kadar Data | — | 7200 MT/s |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| Refresh | — | Auto-refresh and self-refresh |
| Antaramuka | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |