K4RAH165VB-BCWM vs PDRQL8KCBF12-00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH165VB-BCWM sa pamamagitan ng Samsung Electronics at PDRQL8KCBF12-00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RAH165VB-BCWM ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4RAH165VB-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Volte ng Pagbibigay | 1.1 V | 1.1 V |
| Technology | DDR5 | — |
| Packhaging | FBGA-106 | FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | Yes |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gb |
| Organisasyon | — | 2G x 8 |
| Rate ng Data | — | 7200 MT/s |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| Refresh | — | Auto-refresh and self-refresh |
| Interface | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |