K6X0808C1D-GF55000 vs K6X0808C1D-BF55 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-GF55000 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktifSamsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-GF55000 | K6X0808C1D-BF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | Asynchronous SRAM |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 5 V | 5 V |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | 28-SOP | 28-SOP |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | [DATA_NEEDED: operating current] |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| Jenis Output | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | SRAM |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Technology | Low-power CMOS | CMOS |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |