K6X0808C1D-GF55000 vs K6X0808C1D-BF55 比較
詳細並排比較 K6X0808C1D-GF55000 由 Samsung Electronics 與 K6X0808C1D-BF55 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ 啟用中Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ 啟用中規格比較
| 參數 | K6X0808C1D-GF55000 | K6X0808C1D-BF55 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | Asynchronous SRAM |
| 記憶體容量 | 256 Kbit | 256 Kbit |
| 組織 | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| 介面 | Parallel | Parallel |
| 供應電壓 | 5 V | 5 V |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | 28-SOP | 28-SOP |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | [DATA_NEEDED: operating current] |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| 輸出類型 | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | SRAM |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| Technology | Low-power CMOS | CMOS |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |