K6X0808C1D-GF55T vs K6X0808C1D-GF55000 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-GF55T disebabkan oleh Samsung Electro-Mechanics dan K6X0808C1D-GF55000 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifSamsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-GF55T | K6X0808C1D-GF55000 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5.0 V | 5 V |
| Antaramuka | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | 28-SOP (450 mil) | 28-SOP |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| Address Bus Width | 15 bit | — |
| Lebar Bus Data | 8 bit | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (T suffix) | — |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Jenis Output | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |