K6X0808C1D-GF55T vs K6X0808C1D-GF55000 比較
詳細並排比較 K6X0808C1D-GF55T 由 Samsung Electro-Mechanics 與 K6X0808C1D-GF55000 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ 啟用中Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ 啟用中規格比較
| 參數 | K6X0808C1D-GF55T | K6X0808C1D-GF55000 |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 記憶體容量 | 256 Kbit | 256 Kbit |
| 組織 | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5.0 V | 5 V |
| 介面 | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | 28-SOP (450 mil) | 28-SOP |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| Address Bus Width | 15 bit | — |
| 資料匯流排寬度 | 8 bit | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (T suffix) | — |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| 輸出類型 | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |