K9MDG08U5M vs K9XXG08U0M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9MDG08U5M disebabkan oleh Samsung Electronics dan K9XXG08U0M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9MDG08U5M | K9XXG08U0M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | 8 G-bit |
| Organisasi | 16G x 8 bit | 1G x 8 bit |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antaramuka | Asynchronous x8 multiplexed address/data | 8-bit parallel NAND (command/address/data multiplexed) |
| Kemasan | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP-I |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Tegangan Pemberi Arus | — | 2.7 V to 3.6 V (3.3V device) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |