K9MDG08U5M vs K9XXG08U0M Karşılaştırma
Ayrıntılı yan yana karşılaştırma K9MDG08U5M tarafından Samsung Electronics ve K9XXG08U0M tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | K9MDG08U5M | K9XXG08U0M |
|---|---|---|
| Marka | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Bellek Türü | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | 8 G-bit |
| Organizasyon | 16G x 8 bit | 1G x 8 bit |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Arayüz | Asynchronous x8 multiplexed address/data | 8-bit parallel NAND (command/address/data multiplexed) |
| Paket | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP-I |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS Durumu | unknown | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Besleme Gerilimi | — | 2.7 V to 3.6 V (3.3V device) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL Seviyesi | — | [DATA_NEEDED: moisture sensitivity level] |