M29F200FT55M3F2 vs M29F160FB55N3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FT55M3F2 disebabkan oleh Micron Technology dan M29F160FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Aktif
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

Pengandingan Spesifikasi

Parametr M29F200FT55M3F2 M29F160FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Jenis Ingatan Parallel NOR Flash Parallel NOR Flash
Density 2 Mbit (2097 kbits) 16777 kbits (16 Mbit)
Organisasi 256K x 8 / 128K x 16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Architecture Top Boot Block Bottom Boot Block
Programming Interface Embedded program/erase controller, byte or word —
Suhu Operasi -40C to +125C -40 to +125 C
Automotive Qualification Yes —
Kemasan 44-pin SO (TSOP) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free)
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 1000 k
Bits per Word — 16 bits
Tegangan Pemberi Arus — 5 V
Antaramuka — Parallel
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

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