M29F200FT55M3F2 vs M29F160FB55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F200FT55M3F2 sa pamamagitan ng Micron Technology at M29F160FB55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | M29F200FT55M3F2 | M29F160FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Uri ng Memory | Parallel NOR Flash | Parallel NOR Flash |
| Density | 2 Mbit (2097 kbits) | 16777 kbits (16 Mbit) |
| Organisasyon | 256K x 8 / 128K x 16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Architecture | Top Boot Block | Bottom Boot Block |
| Programming Interface | Embedded program/erase controller, byte or word | — |
| Temperature na Operasyon | -40C to +125C | -40 to +125 C |
| Automotive Qualification | Yes | — |
| Packhaging | 44-pin SO (TSOP) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Number of Words (x16 mode) | 128 K | — |
| Bits per Word (x16 mode) | 16 bits | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Volte ng Pagbibigay | — | 5 V |
| Interface | — | Parallel |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |