M29F800FB55N3F2 vs M29F800FT55N3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FB55N3F2 disebabkan oleh Micron Technology dan M29F800FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif
Micron Technology
M29F800FT55N3F2 M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F800FB55N3F2 M29F800FT55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Memory Density 8389 kbits (8 Mbit) —
Organisasi 1M x 8 / 512K x 16 1M x 8 bit / 512K x 16 bit
Tegangan Pemberi Arus 5 V 5 V (single supply)
Access Time 55 ns 55 ns
Jenis Antaramuka Parallel NOR —
Boot Block Architecture Bottom Boot Block Top boot block (T)
Program/Erase Controller Embedded byte/word program algorithms —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel (T/R)
Status RoHS Compliant (lead-free terminations) [DATA_NEEDED: RoHS status]
Jenis Ingatan — NOR Flash, Parallel
Saiz Ingatan — 8 Mbit
Antaramuka — Parallel
Programming Voltage — 5.0 V VCC (no 12 V VPP required)
Kemasan — 48-pin TSOP
Erase Block Size — [DATA_NEEDED: block size]
Data Retention — [DATA_NEEDED: data retention]
Program/Erase Cycles — [DATA_NEEDED: endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read]

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