M29F800FB55N3F2 vs M29F800FT55N3F2 比較
詳細並排比較 M29F800FB55N3F2 由 Micron Technology 與 M29F800FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FB55N3F2 | M29F800FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Memory Density | 8389 kbits (8 Mbit) | — |
| 組織 | 1M x 8 / 512K x 16 | 1M x 8 bit / 512K x 16 bit |
| 供應電壓 | 5 V | 5 V (single supply) |
| Access Time | 55 ns | 55 ns |
| 介面類型 | Parallel NOR | — |
| Boot Block Architecture | Bottom Boot Block | Top boot block (T) |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Package Type | 48-pin TSOP1 | — |
| Package Shape | Rectangular (JESD designation TSOP1) | — |
| Terminal Count | 48 | — |
| JESD-609 Termination Code | e3 (lead-free) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (T/R) |
| RoHS 狀態 | Compliant (lead-free terminations) | [DATA_NEEDED: RoHS status] |
| 記憶體類型 | — | NOR Flash, Parallel |
| 記憶體容量 | — | 8 Mbit |
| 介面 | — | Parallel |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| 封裝 | — | 48-pin TSOP |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |