M29F800FT55M3E2 vs M29F200FT55M3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55M3E2 disebabkan oleh Micron Technology dan M29F200FT55M3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Aktif
Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F800FT55M3E2 M29F200FT55M3F2
Merek Micron Technology Micron Technology
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash Parallel NOR Flash
Saiz Ingatan 8 Mbit —
Organisasi 512K x 16 bit 256K x 8 / 128K x 16
Antaramuka Parallel —
Access Time 55 ns 55 ns
Tegangan Pemberi Arus 5 V —
Suhu Operasi -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
Kemasan 44-SO (SOP) 44-pin SO (TSOP)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (E suffix) [DATA_NEEDED: RoHS status]
Density 8389 kbits 2 Mbit (2097 kbits)
Supply Voltage (VCC) — 5 V
Boot Block Architecture — Top Boot Block
Programming Interface — Embedded program/erase controller, byte or word
Automotive Qualification — Yes
Packaging — Tape & Reel (T/R)
Number of Words (x16 mode) — 128 K
Bits per Word (x16 mode) — 16 bits
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]

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