M29W320DB70N3E vs M29W320DT70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W320DB70N3E disebabkan oleh Micron Technology dan M29W320DT70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ Aktif
Micron Technology
M29W320DT70N3E M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W320DB70N3E M29W320DT70N3E
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash NOR Flash
Density 32 Mbit (33554 kbits) —
Organisasi 2M x 16 4M x8 / 2M x16
Number of Words 2000 k —
Bits per Word 16 bits —
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
VPP Fast Program Voltage 12 V (optional) —
Antaramuka Parallel Parallel
Block Architecture Non-uniform parameter blocks, boot block (bottom boot, DB type) —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Kemasan 48-TSOP I 48-TSOP I
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS ROHS3 Compliant [DATA_NEEDED: RoHS status]
Programming Mode Single VCC program/erase; automatic program/erase with status polling —
Power-Up Mode Read mode (default) —
Saiz Ingatan — 32 Mbit
Read Current (typical) — 10 mA
Boot Block Architecture — Top boot (DT suffix)
Boot Region — 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block
Package Length — 18.4 mm
Aras MSL — 3 (168 Hours)
Peak Reflow Temperature Time — 30 s
Packaging — Tray
Program/Erase Cycles — [DATA_NEEDED: endurance]

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