MRF6S27015GNR1 vs MRF6S18100NBR1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S27015GNR1 disebabkan oleh NXP Semiconductors dan MRF6S18100NBR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Aktif
NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete

Pengandingan Spesifikasi

Parametr MRF6S27015GNR1 MRF6S18100NBR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Obsolete
Manufacturer NXP Semiconductors —
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Kemasan TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W —
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source Single, common-source
Jenis Pemasangan Surface Mount (gull-wing leads) Surface Mount / Flange Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
Status RoHS Compliant Compliant (per NXP product page)
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] —
Jenis Transistor — LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Application — RF Power Amplifier (GSM/GSM EDGE base station)
Frequency Range — 1805 MHz to 1990 MHz
Test Frequency — 1.99 GHz
Drain-Source Voltage (V(BR)DSS) — 68 V
Test Supply Voltage (VDD) — 28 V
Test Drain Current — 900 mA
Output Power (Pout) — 100 W
Power Gain (Gps) — 14.5 dB (typical at 1.99 GHz)
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Kemasan / Case — TO-272 WB-4
Supplier Device Package — TO-272 WB-4
Operating Mode — Class AB / Class C (per design)

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