MRF6S27015GNR1 vs MRF6S18100NBR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF6S27015GNR1 tarafından NXP Semiconductors ve MRF6S18100NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Aktif
NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete

Özellik Karşılaştırması

Parametre MRF6S27015GNR1 MRF6S18100NBR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Obsolete
Manufacturer NXP Semiconductors —
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Paket TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W —
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source Single, common-source
Montaj Türü Surface Mount (gull-wing leads) Surface Mount / Flange Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
RoHS Durumu Compliant Compliant (per NXP product page)
Lead-Free Yes —
MSL Seviyesi [DATA_NEEDED: MSL rating] —
Transistor Türü — LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Application — RF Power Amplifier (GSM/GSM EDGE base station)
Frequency Range — 1805 MHz to 1990 MHz
Test Frequency — 1.99 GHz
Drain-Source Voltage (V(BR)DSS) — 68 V
Test Supply Voltage (VDD) — 28 V
Test Drain Current — 900 mA
Output Power (Pout) — 100 W
Power Gain (Gps) — 14.5 dB (typical at 1.99 GHz)
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Paket / Kas — TO-272 WB-4
Supplier Device Package — TO-272 WB-4
Operating Mode — Class AB / Class C (per design)

Dökümanlar & Kaynaklar

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