MRF6S9045NBR1 vs MRF9030MBR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S9045NBR1 disebabkan oleh NXP Semiconductors dan MRF9030MBR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MRF6S9045NBR1 | MRF9030MBR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale / Motorola) |
| Jenis Transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power | — |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | — |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | Single, common-source |
| Jenis Pemasangan | Surface Mount (flange/ceramic) | Surface Mount (flanged ceramic) |
| Kemasan / Case | NI-880H-2L (TO-272-2 variant) | — |
| Suhu Operasi | [DATA_NEEDED: junction/storage temperature range] | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Lead-Free | Yes | — |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Kemasan | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| Tingkat sensitiviti Air Nama (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |