MRF6S9045NBR1 vs MRF9030MBR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S9045NBR1 sa pamamagitan ng NXP Semiconductors at MRF9030MBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ NakahandaNXP Semiconductors
MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale
MRF9030MBR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6S9045NBR1 | MRF9030MBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale / Motorola) |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power | — |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | — |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | Single, common-source |
| Uri ng Pagpapasok | Surface Mount (flange/ceramic) | Surface Mount (flanged ceramic) |
| Packhaging / Kaso | NI-880H-2L (TO-272-2 variant) | — |
| Temperature na Operasyon | [DATA_NEEDED: junction/storage temperature range] | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Lead-Free | Yes | — |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Packhaging | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |