MRF6S9045NBR1 vs MRF9030MBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S9045NBR1 tarafından NXP Semiconductors ve MRF9030MBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | MRF6S9045NBR1 | MRF9030MBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale / Motorola) |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power | — |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | — |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | Single, common-source |
| Montaj Türü | Surface Mount (flange/ceramic) | Surface Mount (flanged ceramic) |
| Paket / Kas | NI-880H-2L (TO-272-2 variant) | — |
| İşletim Sıcaklığı | [DATA_NEEDED: junction/storage temperature range] | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | — |
| RoHS Durumu | Compliant | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Lead-Free | Yes | — |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Paket | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| Nem Hassasiyet Seviyesi (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |