MRF6V4300NBR5 vs MRF6V3090NR1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6V4300NBR5 disebabkan oleh NXP Semiconductors dan MRF6V3090NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF6V4300NBR5 MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 ✓ Aktif
NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MRF6V4300NBR5 MRF6V3090NR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor RF Power MOSFET, N-Channel Enhancement-Mode Lateral N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Manufacturer NXP Semiconductors (formerly Freescale) —
Drain-Source Voltage (Vds) Maximum 110 V —
Continuous Drain Current (Id) [DATA_NEEDED: continuous drain current rating] —
Operating Frequency Range 10 MHz to 600 MHz —
Test Frequency 450 MHz 860 MHz
Output Power (Pout) 300 W CW —
Power Gain (Gps) 22 dB typical at 450 MHz, 50 V —
Operating Drain Voltage (Vdd) Typical 50 V —
Power Dissipation (Pd) [DATA_NEEDED: Pd maximum] —
Noise Figure (NF) Typical [DATA_NEEDED: noise figure typical] —
Input Matching Unmatched (external matching required) —
VSWR Capability 10:1 VSWR at all phase angles, 50 V, 860 MHz reference —
Kemasan TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) —
Jenis Pemasangan Surface Mount / Flange Mount with screws Surface Mount / Flange Mount with bolt-down heatsink
Gambaran Suhu Operasi [DATA_NEEDED: junction/operating temperature] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt]
Tape & Reel Packaging Yes (suffix R5 indicates 250-unit reel) —
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 350 mA
Frequency Range — 470 MHz to 1215 MHz
Output Power (CW, Pout) — 90 W
Power Gain (typical) — 22 dB at 860 MHz
Drain Efficiency (typical) — [DATA_NEEDED: drain efficiency %]
VSWR Tolerance — 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW
Input Power (Pin) — [DATA_NEEDED: input drive level for 90 W Pout]
Package Type — TO-270 WB-4 (TO-272-4 family, ceramic air-cavity)
Suhu Hubungan Operasi — -40C to +200C (max TJ)
Tegangan Panas — [DATA_NEEDED: theta_JC value C/W]
Aras MSL — [DATA_NEEDED: MSL rating]
Reel Quantity (R1 suffix) — 500 per reel (R1 = 500 unit reel)

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