MRF6V4300NBR5 vs MRF6V3090NR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF6V4300NBR5 tarafından NXP Semiconductors ve MRF6V3090NR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF6V4300NBR5 MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 ✓ Aktif
NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Aktif

Özellik Karşılaştırması

Parametre MRF6V4300NBR5 MRF6V3090NR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü RF Power MOSFET, N-Channel Enhancement-Mode Lateral N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Manufacturer NXP Semiconductors (formerly Freescale) —
Drain-Source Voltage (Vds) Maximum 110 V —
Continuous Drain Current (Id) [DATA_NEEDED: continuous drain current rating] —
Operating Frequency Range 10 MHz to 600 MHz —
Test Frequency 450 MHz 860 MHz
Output Power (Pout) 300 W CW —
Power Gain (Gps) 22 dB typical at 450 MHz, 50 V —
Operating Drain Voltage (Vdd) Typical 50 V —
Power Dissipation (Pd) [DATA_NEEDED: Pd maximum] —
Noise Figure (NF) Typical [DATA_NEEDED: noise figure typical] —
Input Matching Unmatched (external matching required) —
VSWR Capability 10:1 VSWR at all phase angles, 50 V, 860 MHz reference —
Paket TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) —
Montaj Türü Surface Mount / Flange Mount with screws Surface Mount / Flange Mount with bolt-down heatsink
İşletim Sıcaklığı Aralığı [DATA_NEEDED: junction/operating temperature] —
RoHS Durumu [DATA_NEEDED: RoHS status] [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt]
Tape & Reel Packaging Yes (suffix R5 indicates 250-unit reel) —
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 350 mA
Frequency Range — 470 MHz to 1215 MHz
Output Power (CW, Pout) — 90 W
Power Gain (typical) — 22 dB at 860 MHz
Drain Efficiency (typical) — [DATA_NEEDED: drain efficiency %]
VSWR Tolerance — 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW
Input Power (Pin) — [DATA_NEEDED: input drive level for 90 W Pout]
Package Type — TO-270 WB-4 (TO-272-4 family, ceramic air-cavity)
İşletim Jant Sıcaklığı — -40C to +200C (max TJ)
Termal Direnç — [DATA_NEEDED: theta_JC value C/W]
MSL Seviyesi — [DATA_NEEDED: MSL rating]
Reel Quantity (R1 suffix) — 500 per reel (R1 = 500 unit reel)

Dökümanlar & Kaynaklar

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