MRF6V4300NBR5 vs MRF6V3090NR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V4300NBR5 sa pamamagitan ng NXP Semiconductors at MRF6V3090NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
MRF6V4300NBR5 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MRF6V4300NBR5 | MRF6V3090NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | RF Power MOSFET, N-Channel Enhancement-Mode Lateral | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (Vds) Maximum | 110 V | — |
| Continuous Drain Current (Id) | [DATA_NEEDED: continuous drain current rating] | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 450 MHz | 860 MHz |
| Output Power (Pout) | 300 W CW | — |
| Power Gain (Gps) | 22 dB typical at 450 MHz, 50 V | — |
| Operating Drain Voltage (Vdd) Typical | 50 V | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Pd maximum] | — |
| Noise Figure (NF) Typical | [DATA_NEEDED: noise figure typical] | — |
| Input Matching | Unmatched (external matching required) | — |
| VSWR Capability | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference | — |
| Packhaging | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) | — |
| Uri ng Pagpapasok | Surface Mount / Flange Mount with screws | Surface Mount / Flange Mount with bolt-down heatsink |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction/operating temperature] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] |
| Tape & Reel Packaging | Yes (suffix R5 indicates 250-unit reel) | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 350 mA |
| Frequency Range | — | 470 MHz to 1215 MHz |
| Output Power (CW, Pout) | — | 90 W |
| Power Gain (typical) | — | 22 dB at 860 MHz |
| Drain Efficiency (typical) | — | [DATA_NEEDED: drain efficiency %] |
| VSWR Tolerance | — | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Input Power (Pin) | — | [DATA_NEEDED: input drive level for 90 W Pout] |
| Package Type | — | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Temperature ng Junction na Operasyon | — | -40C to +200C (max TJ) |
| Thermal Resistance | — | [DATA_NEEDED: theta_JC value C/W] |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Reel Quantity (R1 suffix) | — | 500 per reel (R1 = 500 unit reel) |