MRF8S9120NR3 vs MRF8P9040NR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S9120NR3 disebabkan oleh NXP Semiconductors dan MRF8P9040NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ AktifPengandingan Spesifikasi
| Parametr | MRF8S9120NR3 | MRF8P9040NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S9120NR3 | — |
| Jenis Transistor | Lateral N-Channel MOSFET, Enhancement-Mode | N-Channel Lateral MOSFET (RF Power) |
| Application | W-CDMA / cellular base station RF power amplifier final stage | — |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) | 728 MHz to 960 MHz |
| Drain Supply Voltage (VDD) | 28 V | — |
| Average Output Power | 33 W (W-CDMA, single-carrier) | — |
| Power Gain (typical) | 19.8 dB | — |
| Quiescent Drain Current (IDQ) | 800 mA typical | — |
| Kemasan | OM-780-2 (ceramic air-cavity, flange mount) | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Jenis Pemasangan | Flange / chassis mount (through-hole RF package) | Surface Mount / Flange Mount |
| Operating Class | Class AB, Class C | — |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier | CDMA, W-CDMA, LTE |
| Maximum Junction Temperature | [DATA_NEEDED: maximum junction temperature] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | Gold metallisation (typical for HV8 process) | — |
| Technology | — | HV8 Lateral N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Kiraan Pin | — | 4 (Drain on flange) |
| PA Topology Suitability | — | Class AB, Class C |
| Aras MSL | — | 3 |
| Lead-Free | — | Yes (per typical NXP HV8 family) |