MRF8S9120NR3 vs MRF8P9040NR1 比較
詳細並排比較 MRF8S9120NR3 由 NXP Semiconductors 與 MRF8P9040NR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ 啟用中規格比較
| 參數 | MRF8S9120NR3 | MRF8P9040NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S9120NR3 | — |
| 電晶體類型 | Lateral N-Channel MOSFET, Enhancement-Mode | N-Channel Lateral MOSFET (RF Power) |
| Application | W-CDMA / cellular base station RF power amplifier final stage | — |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) | 728 MHz to 960 MHz |
| Drain Supply Voltage (VDD) | 28 V | — |
| Average Output Power | 33 W (W-CDMA, single-carrier) | — |
| Power Gain (typical) | 19.8 dB | — |
| Quiescent Drain Current (IDQ) | 800 mA typical | — |
| 封裝 | OM-780-2 (ceramic air-cavity, flange mount) | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| 安裝類型 | Flange / chassis mount (through-hole RF package) | Surface Mount / Flange Mount |
| Operating Class | Class AB, Class C | — |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier | CDMA, W-CDMA, LTE |
| Maximum Junction Temperature | [DATA_NEEDED: maximum junction temperature] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | Gold metallisation (typical for HV8 process) | — |
| Technology | — | HV8 Lateral N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| 腳位數 | — | 4 (Drain on flange) |
| PA Topology Suitability | — | Class AB, Class C |
| MSL 等級 | — | 3 |
| Lead-Free | — | Yes (per typical NXP HV8 family) |