MRF8S9120NR3 vs MRF8P9040NR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S9120NR3 sa pamamagitan ng NXP Semiconductors at MRF8P9040NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8S9120NR3 MRF8S9120NR3 - 33W RF Power MOSFET 865-960MHz | NXP

MRF8S9120NR3 - 33W RF Power MOSFET 865-960MHz | NXP

MRF8S9120NR3 ✓ Nakahanda
NXP Semiconductors
MRF8P9040NR1 MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8S9120NR3 MRF8P9040NR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
Part Number MRF8S9120NR3 —
Uri ng Transistor Lateral N-Channel MOSFET, Enhancement-Mode N-Channel Lateral MOSFET (RF Power)
Application W-CDMA / cellular base station RF power amplifier final stage —
Operating Frequency Range 865 MHz to 960 MHz (usable 700-1000 MHz) 728 MHz to 960 MHz
Drain Supply Voltage (VDD) 28 V —
Average Output Power 33 W (W-CDMA, single-carrier) —
Power Gain (typical) 19.8 dB —
Quiescent Drain Current (IDQ) 800 mA typical —
Packhaging OM-780-2 (ceramic air-cavity, flange mount) TO-272 WB-4 (air-cavity overmold, 4 lead + flange)
Uri ng Pagpapasok Flange / chassis mount (through-hole RF package) Surface Mount / Flange Mount
Operating Class Class AB, Class C —
Modulation Formats Supported W-CDMA, LTE, GSM/EDGE, multi-carrier CDMA, W-CDMA, LTE
Maximum Junction Temperature [DATA_NEEDED: maximum junction temperature] —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead Finish Gold metallisation (typical for HV8 process) —
Technology — HV8 Lateral N-Channel Enhancement-Mode
Drain-Source Voltage (Vdss) Max — 70 V
Continuous Drain Current (Id) — 320 mA (per DigiKey listing)
Test Drain Supply Voltage — 28 V
Output Power (Pout) Avg — 4.0 W (CW / modulated at 28 V, 960 MHz)
Power Gain (Gps) at 960 MHz — 19.1 dB
Bilang ng Pin — 4 (Drain on flange)
PA Topology Suitability — Class AB, Class C
Level ng MSL — 3
Lead-Free — Yes (per typical NXP HV8 family)

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