MT41K256M16TG-125 vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16TG-125 disebabkan oleh Micron Technology dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT41K256M16TG-125 | K4B4G1646E-BYMA |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | 800 MHz | 933 MHz |
| Access Time | 20 ns | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| Kadar Data | 1600 MT/s | 1866 Mbps/pin |
| Latensi CAS | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS Latency] |
| Status RoHS | Compliant | — |
| Lead Free | Yes | — |
| Bilangan Pin | 96 | 96 |
| Density | — | 4 Gb |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Burst Length | — | [DATA_NEEDED: Burst Length] |