NT5CC256M16DP-DI vs K4B4G1646D-BYK00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16DP-DI disebabkan oleh Nanya Technology dan K4B4G1646D-BYK00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ AktifPengandingan Spesifikasi
| Parametr | NT5CC256M16DP-DI | K4B4G1646D-BYK00 |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V | 1.35 V (also operates at 1.5 V) |
| Kadar Data | 1600 Mbps/pin (800MHz) | 1600 Mbps |
| Kemasan | VFBGA-96 | 96-ball TFBGA |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial) | — |
| Latensi CAS | 11, 12, 13 (programmable) | Programmable |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| Antaramuka | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | — | 96 |
| Suhu Operasi | — | 0°C to 85°C |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Boson Bebas | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |