NT5CC256M16DP-DI vs K4B4G1646D-BYK00 比較
詳細並排比較 NT5CC256M16DP-DI 由 Nanya Technology 與 K4B4G1646D-BYK00 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 啟用中規格比較
| 參數 | NT5CC256M16DP-DI | K4B4G1646D-BYK00 |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35V | 1.35 V (also operates at 1.5 V) |
| 資料速率 | 1600 Mbps/pin (800MHz) | 1600 Mbps |
| 封裝 | VFBGA-96 | 96-ball TFBGA |
| 工作溫度範圍 | -40°C to +95°C (industrial) | — |
| CAS 延遲 | 11, 12, 13 (programmable) | Programmable |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| 介面 | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | — | 96 |
| 工作溫度 | — | 0°C to 85°C |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| 無鹵素 | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |