NT5CC256M16DP-DI vs K4B4G1646D-BYK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology at K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-DI | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V | 1.35 V (also operates at 1.5 V) |
| Rate ng Data | 1600 Mbps/pin (800MHz) | 1600 Mbps |
| Packhaging | VFBGA-96 | 96-ball TFBGA |
| Hanay ng Temperature na Operasyon | -40°C to +95°C (industrial) | — |
| Latensya ng CAS | 11, 12, 13 (programmable) | Programmable |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| Interface | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | — | 96 |
| Temperature na Operasyon | — | 0°C to 85°C |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Wala sa Halogen | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |