VNQ660SP vs VNQ660SPTR-E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci VNQ660SP disebabkan oleh STMicroelectronics dan VNQ660SPTR-E disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr VNQ660SP VNQ660SPTR-E
Merek STMicroelectronics STMicroelectronics
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Part Number VNQ660SP —
Manufacturer STMicroelectronics —
Technology VIPower M0-3 ST VIPower M0-3 (vertical DMOS)
Fungsi Quad Channel High-Side Solid State Relay Quad-channel high-side solid-state relay
Number of Channels 4 4
Konfigurasi Output High-Side (N-Channel MOSFET) —
On-Resistance RDS(on) per Channel 50 mΩ (typical) —
Continuous Output Current per Channel 6 A —
Supply Voltage VCC 10 V to 36 V —
Input Compatibility CMOS-compatible logic inputs CMOS logic-level inputs
Open-Load Detection Yes (off-state) —
Undervoltage Shutdown Yes —
Overvoltage Shutdown Yes —
Overvoltage Clamp Yes (active avalanche) —
Pengumpasan Panas Yes —
Current Limitation Yes —
Kemasan PowerSO-10 (10-pin with exposed pad) PowerSO-10 with exposed bottom pad
Jenis Pemasangan Surface Mount Surface Mount
Switch Type — High-side N-channel power MOSFET
Supply Voltage (VCC) — 6 V to 36 V
Maximum Continuous Output Current (per channel) — 6 A
On-State Resistance (RDS(on)) — 40 mOhm typical (per channel)
Protection Features — Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection
Status Feedback — Analog status flag per channel
Off-State Quiescent Current — [DATA_NEEDED: standby Iq]
Suhu Operasi — -40 C to +125 C
Maximum Power Dissipation — 113.6 W (with proper thermal design)
Status RoHS — Compliant

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