1EDI40I12AFXUMA1 - 1200V Isolated Gate Driver, 7.5A | Infineon
MPN: 1EDI40I12AFXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.15 | $315.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.3 | $2,300.00 |
1EDI40I12AFXUMA1 Overview
An isolated gate driver IC is a critical interface between low-voltage control logic and a high-voltage power transistor. Galvanic isolation, achieved here through Infineon's coreless transformer (CT) technology, blocks high dV/dt common-mode transients and protects the microcontroller side from potentially destructive high-voltage faults. Within the broader power-management hierarchy, the 1EDI40I12AF sits between the gate-driver family -> isolated gate drivers -> MOSFET/IGBT drivers -> power management ICs -> semiconductors, making it foundational to any switched-mode power-conversion stage requiring safe control isolation.
Key features include 7.5 A source / 6.8 A sink drive strength, separate source/sink pins for asymmetric gate-charge profiling, short-circuit clamping with DESAT-style protection, Undervoltage Lockout (UVLO) on the secondary side, and 4 mm package creepage meeting IEC 60664 reinforced-insulation creepage requirements for 1200 V systems. The CT isolation technology eliminates the optocoupler aging concerns of legacy HCPL drivers and supports propagation delays below 100 ns typical.
The architecture uses an on-chip transmitter to encode input PWM across a coreless transformer, with a secondary-side decoder that regenerates the gate-drive signal. This topology rejects common-mode transients exceeding 100 kV/us, far surpassing optocoupler-based alternatives. The PG-DSO-8-51 footprint is mechanically robust and supports >2.5 mm stand-off, enabling PCB designs conforming to IEC 61800-5-1 drive-system isolation standards.
Typical applications include industrial motor drives (servo, VFD), solar string inverters, EV traction inverters, induction-heating resonant converters, and high-voltage DC-DC converters. The wide 3.1 V to 17 V secondary supply allows operation directly from a 5 V or 12 V bias rail without additional level shifting.
When designing with this part, ensure the secondary-side decoupling capacitor is placed within 5 mm of VCC2/GND2 to suppress switching-spike ringing. Designers should also confirm that the 4 mm creepage clearance is not violated by adjacent high-voltage traces.
This page synthesizes distributor stock data, drop-in EiceDRIVER alternatives, application reference designs, and practical PCB layout guidance not available from the manufacturer datasheet alone - giving engineers a single source for sourcing, designing, and qualifying the 1EDI40I12AF in new and existing 1200 V power stages.
Drop-in alternatives for 1EDI40I12AFXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDI60I12AFXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1EDI20I12AFXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1EDI30I12AFXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1EDI40I12AFXUMA2
β Drop-Inπ Reference alternative (not in catalog)
1EDI40I12AFXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated Single-Channel Gate Driver IC |
| Driver Configuration | Single High-Side, Galvanically Isolated |
| Isolation Technology | Coreless Transformer (CT) |
| Working Voltage (Isolation) | 1200 V |
| Source Drive Current | +7.5 A |
| Sink Drive Current | -6.8 A |
| Secondary Supply Voltage (VCC2) | 3.1 V to 17 V |
| Output Pins | Separate Source / Sink outputs |
| Short-Circuit Clamping | Yes (DESAT-style) |
| UVLO | Yes (secondary side) |
| Creepage Distance | 4 mm |
| Package | PG-DSO-8-51 (DSO-8 wide-body) |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40C to +125C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
1EDI40I12AFXUMA1 Pin Configuration
| Pin 1 | VCC1 β Primary-side supply voltage (3.1 V to 5.5 V typical) |
| Pin 2 | GND1 β Primary-side ground reference |
| Pin 3 | IN+ β Non-inverting PWM input |
| Pin 4 | IN- β Inverting PWM input |
| Pin 5 | VCC2 β Secondary-side supply voltage (3.1 V to 17 V) |
| Pin 6 | GND2 β Secondary-side (gate-driver) ground |
| Pin 7 | OUT_SINK β Gate-drive sink output (connect to IGBT/MOSFET gate via gate resistor) |
| Pin 8 | OUT_SOURCE β Gate-drive source output (connect to IGBT/MOSFET gate via gate resistor) |
Typical Applications
1EDI40I12AFXUMA1 is suitable for 6 applications: Industrial Variable-Frequency Drives (VFD), Solar String Inverters, Electric Vehicle Traction Inverters, Induction Heating Resonant Converters, High-Voltage DC-DC Converters, Industrial Welding Power Supplies.
Industrial Variable-Frequency Drives (VFD)
The 1EDI40I12AFXUMA1 provides isolated gate-drive for 1200 V IGBT modules in VFD motor drives serving 400 VAC and 690 VAC industrial bus systems. Its +7.5 A/-6.8 A source/sink capability enables switching of large IGBT modules (e.g., 600 A/1200 V half-bridge modules) with dv/dt above 10 kV/us while maintaining low switching loss. The 4 mm PG-DSO-8-51 creepage meets IEC 61800-5-1 reinforced-insulation requirements between the LV control board and HV power stage. Placed between a microcontroller's PWM output and the IGBT module gate, the driver reduces propagation delay to under 100 ns and rejects common-mode transients, ensuring reliable motor control up to several hundred kHz PWM frequency in industrial servo and VFD applications.
Recommended
Solar String Inverters
The 1EDI40I12AFXUMA1 drives 1200 V IGBTs in 1000 V DC-bus solar string inverters up to 50 kW. With galvanic isolation rated to 1200 V working voltage, it safely interfaces the MCU control side with the high-voltage DC bus. Its 7.5 A source current enables fast turn-on (under 50 ns typical) of 1200 V IGBT modules, reducing switching losses by up to 30% compared to slower gate drivers. The 4 mm creepage clearance supports PCB designs conforming to IEC 62109-1 photovoltaic safety standards. Used in 3-level NPC and HERIC inverter topologies, this driver ensures transformerless grid-tie efficiency above 98% while protecting the MCU side from grid-induced common-mode transients up to 100 kV/us.
Recommended
Electric Vehicle Traction Inverters
The 1EDI40I12AFXUMA1 functions as the high-side gate driver in 800 V EV traction inverter modules, providing isolation between the LV vehicle control unit and 800 V battery bus. Its 7.5 A/-6.8 A drive strength supports 1200 V SiC MOSFET and IGBT half-bridge modules used in 100-250 kW traction drives. The CT isolation technology withstands battery-bus transients and the wide -40C to +125C operating range enables under-hood mounting near the inverter coolant loop. By delivering sub-100 ns propagation delays and separate source/sink pins, the driver enables dead-time optimization below 200 ns - critical for SiC inverter efficiencies above 97% in 800 V EV powertrains.
Recommended
Induction Heating Resonant Converters
The 1EDI40I12AFXUMA1 drives the high-voltage IGBTs in induction-heating resonant converters operating at 20-100 kHz. The 7.5 A source current drives large IGBTs used in 5-25 kW induction cooktops and industrial induction furnaces. Its galvanic isolation eliminates ground-loop noise between the resonant tank and the digital controller, and its separate source/sink pins allow asymmetric gate resistor selection to optimize zero-voltage switching (ZVS). The PG-DSO-8-51 package fits within the tight PCB constraints of compact induction-heating modules while providing the 4 mm creepage needed for appliance safety certification to IEC 60335-1.
Recommended
High-Voltage DC-DC Converters
The 1EDI40I12AFXUMA1 drives the primary-side IGBTs in 1500 V DC-DC converters used in railway auxiliary power supplies and battery energy storage systems (BESS). Its 1200 V working voltage rating covers the typical 750-1000 V DC bus voltage with margin, and its 7.5 A/-6.8 A drive strength enables efficient switching of 1200 V IGBTs at 10-20 kHz for medium-power isolated DC-DC stages. The CT isolation provides reinforced insulation per EN 50178 railway standards. Combined with a high-side bootstrap supply or isolated DC-DC bias module, the driver simplifies high-side control in bidirectional battery chargers and DC traction converters.
Recommended
Industrial Welding Power Supplies
The 1EDI40I12AFXUMA1 enables reliable isolated gate drive for 1200 V IGBT modules in inverter welding power supplies used for arc welding at 200-600 A output. Its 7.5 A source current drives large IGBTs handling 30-50 kW welding power, while galvanic isolation protects the welding current feedback and control circuitry from the high-voltage bus. The 4 mm creepage distance and 1200 V isolation rating satisfy IEC 60974-1 welding equipment safety standards. With separate source/sink pins, the designer can tune gate resistors to balance dv/dt EMI suppression with switching loss, ensuring robust performance in harsh industrial welding environments with high common-mode noise.
Recommended
Recommended Products Summary
Engineering reference data for 1EDI40I12AFXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDI60I12AFXUMA1 | 1EDI30I12AFXUMA1 | 1EDI20I12AFXUMA1 | 1EDI40I12AFXUMA2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-51 | PG-DSO-8-51 (same) | PG-DSO-8-51 (same) | PG-DSO-8-51 (same) | PG-DSO-8-51 (same) |
| Source Drive Current | +7.5 A | +10 A | +5 A | +2 A | +7.5 A |
| Sink Drive Current | -6.8 A | -10 A | -5 A | -2 A | -6.8 A |
| Working Isolation Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Secondary Supply Range (VCC2) | 3.1 V to 17 V | 3.1 V to 17 V | 3.1 V to 17 V | 3.1 V to 17 V | 3.1 V to 17 V |
| Creepage Distance | 4 mm | 4 mm | 4 mm | 4 mm | 4 mm |
| Output Pins | Separate Source/Sink | Separate Source/Sink | Separate Source/Sink | Separate Source/Sink | Separate Source/Sink |
| UVLO | Yes (secondary side) | Yes | Yes | Yes | Yes |
Key Differentiators
- Coreless transformer (CT) isolation with 1200 V rating and >100 kV/us CMTI (vs HCPL-3120 (legacy optocoupler gate driver))
- +7.5 A source / -6.8 A sink drive strength in PG-DSO-8-51 (vs 1EDI20I12AFXUMA1 (PG-DSO-8-51, +2 A/-2 A))
- Separate source and sink output pins for asymmetric gate-charge profiling (vs UCC21750 (single-gate-pin topology))
Design Notes
Place the VCC2 decoupling capacitor (typically 1 uF X7R ceramic in parallel with 10 uF bulk) within 5 mm of pins 5 and 6 to suppress gate-drive voltage ringing. Place the VCC1 decoupling capacitor within 5 mm of pins 1 and 2. Maintain a clearance of at least 4 mm between the PG-DSO-8-51 package body and any high-voltage copper pour to preserve the creepage distance required for 1200 V isolation. Use a ground-return cutout under the driver to avoid creating a parasitic capacitance that couples HV transients to the LV side.
A common design mistake is using a single gate resistor instead of separate source/sink resistors. The 1EDI40I12AFXUMA1 provides separate OUT_SOURCE and OUT_SINK pins, and selecting R_source < R_sink reduces turn-off switching loss while limiting turn-on dv/dt for EMI. A second common pitfall is neglecting the secondary-side UVLO threshold: if VCC2 falls below the UVLO level during a load transient, the gate output goes low and disables the IGBT, which can trigger catastrophic shoot-through in half-bridge configurations. Always design the VCC2 bias supply (e.g., isolated DC-DC module) to maintain at least 0.5 V margin above the UVLO turn-on threshold under worst-case load.
The PG-DSO-8-51 package dissipates heat primarily through the PCB copper pads under pins 5-8 (OUT_SINK, OUT_SOURCE, VCC2, GND2). For continuous +7.5 A drive current at 100 kHz switching, gate charge losses can reach 0.5 W per driver. Provide at least 100 mm^2 of 2 oz copper connected to pins 5 and 6 to keep junction temperature rise below 20 C. Estimated: at 0.5 W with the package's theta_JA of approximately 100 C/W on a 2-layer FR4 board, junction temperature rise is approximately 50 C above ambient.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade). Reach SVHC compliant per EU declaration.
