2ED020I12F2XUMA1 - 1200V Isolated Dual IGBT Gate Driver | Infineon
MPN: 2ED020I12F2XUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.2 | $7.20 |
| 10 | $6.48 | $64.80 |
| 100 | $5.74 | $574.00 |
| 500 | $5.1 | $2,550.00 |
| 1,000 | $4.55 | $4,550.00 |
2ED020I12F2XUMA1 Overview
A gate driver IC is a power-management semiconductor that sits between a low-power logic controller (3.3 V/5 V MCU or DSP) and a high-power switching device (IGBT, SiC MOSFET, or GaN HEMT). It provides the high peak currents needed to charge and discharge the gate capacitance quickly while providing logic-level translation, level shifting across an isolation barrier, and protection features such as desaturation detection and short-circuit clamping. Within the broader power-electronics hierarchy, a gate driver bridges the control domain (signal processing) and the power domain (motor drives, solar inverters, UPS, induction heating), and the 2ED020I12F2 sits in the high-voltage (>600 V) isolated-driver category.
Key specifications include 1200 V blocking-voltage capability across the isolation barrier, 2 A source/sink gate drive current, under-voltage lockout (UVLO) for both driver rails, programmable DESAT blanking time, integrated Miller clamp, and Β±5 kV HBM ESD robustness on input pins. The CT isolation technology eliminates the need for an external isolated DC/DC converter bias on the low-voltage side, though a bootstrap or isolated supply is still required to power the output side.
Architecturally, the device uses Infineon's coreless-transformer isolation to transmit PWM signals across the high-voltage barrier, providing reinforced galvanic isolation that meets IEC 60747-17 requirements. Each channel has independent input logic (INHS+, INHS-, INLS+, INLS-), gate-drive output rail-to-rail, and dedicated protection flags. The internal DESAT comparator monitors the collector-emitter voltage of the driven IGBT and triggers a soft turn-off within microseconds when a short circuit is detected.
Typical applications include industrial motor drives (servo, VFD), solar string and central inverters, UPS systems, induction-heating converters, EV charging (on-board and DC fast chargers), and welding power supplies. The wide-body DSO-36 package provides adequate creepage and clearance distances for reinforced isolation at 1200 V working voltage per IEC 60664-1.
When designing with this driver, maintain at least 8 mm creepage between primary-side and secondary-side PCB traces, place the DESAT diode and blanking capacitor close to the IC, and use a low-impedance gate-loop layout. Verify that the bootstrap capacitor refreshes fully each switching cycle at minimum duty cycle. Compared with non-isolated gate drivers, this part eliminates the need for an optocoupler but still requires an isolated bias supply for the secondary side.
This page synthesizes distributor pricing, drop-in alternatives from the same EiceDRIVER family, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2ED020I12F2XUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2ED020I12-F2
β Drop-Inπ Reference alternative (not in catalog)
2ED020I12F2XUMA2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1ED020I12-F2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
2ED020I12F2XUMA1 Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver IC, Galvanically Isolated |
| Configuration | Inverting, Non-Inverting (two independent channels) |
| Isolation Technology | Coreless Transformer (CT), Galvanic |
| Number of Channels | 2 (dual high-side + low-side capable) |
| Isolation Voltage | 1200 V working voltage per IEC 60747-17 |
| Gate Drive Current (Source/Sink) | 2 A typical |
| Output Stage | Rail-to-rail driver outputs |
| Protection Features | DESAT short-circuit detection, Miller clamp, UVLO, active shut-down |
| Target Switch Technology | 600 V / 1200 V IGBT, SiC MOSFET |
| Input Logic Compatibility | 3.3 V / 5 V CMOS / TTL (per datasheet) |
| Package | PG-DSO-36-58 (wide-body DSO-36 surface mount) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40C to +125C (junction) |
| RoHS Status | Compliant |
| Family | EiceDRIVER Enhanced 2ED020I12-F2 |
| DESAT Blanking Time | Programmable via external capacitor |
2ED020I12F2XUMA1 Pin Configuration
| Pin 1 | VCC1 β Primary-side (input) 3.3 V / 5 V supply |
| Pin 2 | GND1 β Primary-side ground reference for logic inputs |
| Pin 3 | INHS+ β High-side non-inverting PWM input |
| Pin 4 | INHS- β High-side inverting PWM input |
| Pin 5 | INLS+ β Low-side non-inverting PWM input |
| Pin 6 | INLS- β Low-side inverting PWM input |
| Pin 7 | FAULT β Open-drain fault indicator (DESAT / UVLO) |
| Pin 8 | RDY β Power-good / ready output |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | VCC2HS β High-side secondary-side supply (typically +15 V bootstrap) |
| Pin 12 | GND2HS β High-side secondary-side ground (return for bootstrap cap) |
| Pin 13 | OUTHS β High-side gate-drive output (rail-to-rail) |
| Pin 14 | DESATHS β High-side DESAT (desaturation) sense input |
| Pin 15 | CLAMPHS β High-side Miller clamp transistor connection |
| Pin 16 | NC β Not connected (per datasheet) |
| Pin 17 | NC β Not connected (per datasheet) |
| Pin 18 | VBHS β High-side floating supply (bootstrap rail) |
| Pin 19 | VSHS β High-side offset voltage (sensed high-side emitter) |
| Pin 20 | NC β Not connected (per datasheet) |
| Pin 21 | NC β Not connected (per datasheet) |
| Pin 22 | NC β Not connected (per datasheet) |
| Pin 23 | VCC2LS β Low-side secondary-side supply (+15 V) |
| Pin 24 | GND2LS β Low-side secondary-side ground |
| Pin 25 | OUTLS β Low-side gate-drive output (rail-to-rail) |
| Pin 26 | DESATLS β Low-side DESAT sense input |
| Pin 27 | CLAMPLS β Low-side Miller clamp transistor connection |
| Pin 28 | NC β Not connected (per datasheet) |
| Pin 29 | NC β Not connected (per datasheet) |
| Pin 30 | NC β Not connected (per datasheet) |
| Pin 31 | NC β Not connected (per datasheet) |
| Pin 32 | NC β Not connected (per datasheet) |
| Pin 33 | NC β Not connected (per datasheet) |
| Pin 34 | NC β Not connected (per datasheet) |
| Pin 35 | NC β Not connected (per datasheet) |
| Pin 36 | PAD β Exposed thermal pad (connected to GND1 / GND2LS depending on layout) |
Typical Applications
2ED020I12F2XUMA1 is suitable for 6 applications: Industrial Motor Drives (Servo / VFD), Solar String / Central Inverters, Uninterruptible Power Supplies (UPS), EV On-Board Chargers (OBC) and DC Fast Chargers, Induction Heating Cooktops and Industrial Heating, Welding Power Supplies and Plasma Cutters.
Industrial Motor Drives (Servo / VFD)
The 2ED020I12F2XUMA1 is ideally suited for 600 V/1200 V three-phase industrial motor drives driving 50-100 kW servo or variable-frequency drives. Its 1200 V galvanic isolation eliminates the need for optocouplers in the gate-drive path, while the 2 A source/sink current enables switching transitions under 200 ns on 600 A-class IGBT modules, minimizing switching losses. The integrated DESAT protection with programmable blanking detects short-circuit events within 2-5 microseconds and initiates a soft turn-off sequence, protecting expensive IGBT modules from catastrophic failure. Typical placement is between the control DSP and the IGBT half-bridge module, with one driver per phase high-side and low-side.
Recommended
Solar String / Central Inverters
In three-phase 1100 V DC solar string inverters and central inverters, the 2ED020I12F2XUMA1 drives the 1200 V IGBT half-bridge of the boost and grid-tie stages. Its reinforced galvanic isolation meets IEC 62109 and UL 1741 safety requirements for PV installations, removing optocouplers from the BOM and improving long-term reliability under thermal cycling. The Miller clamp actively prevents parasitic turn-on during the dead-time interval, which is particularly important for high-frequency SiC implementations in newer 1500 V DC string inverter designs. Combined with a 2 A peak drive, the part supports 50 kHz switching on 600 V/650 V IGBT modules typical of 50-100 kW string inverters.
Recommended
Uninterruptible Power Supplies (UPS)
The 2ED020I12F2XUMA1 is widely deployed in online double-conversion UPS systems from 10 kVA to 200 kVA rating. The driver sits between the DSP controller and the 1200 V IGBT inverter bridge that converts the battery DC bus into the 230 V/400 V AC output. Reinforced galvanic isolation simplifies the safety-isolation architecture mandated by IEC 62040-1, and the integrated DESAT protection is critical because UPS inverter fault events (output short circuits) must be cleared within microseconds to protect the IGBTs. Typical switching frequencies of 16-20 kHz for IGBTs or 50-100 kHz for SiC are well within the driver's 2 A capability.
Recommended
EV On-Board Chargers (OBC) and DC Fast Chargers
In 11 kW/22 kW on-board EV chargers (OBCs) and 50 kW-350 kW DC fast chargers, the 2ED020I12F2XUMA1 drives the totem-pole PFC and isolated DC-DC stages built around 1200 V SiC MOSFETs. Its reinforced isolation eliminates the bulky optocoupler and digital-isolator feedback chain, while the Miller clamp suppresses the parasitic turn-on that is otherwise a major issue in high-frequency SiC half-bridges at 100-200 kHz. IEC 61851-1 reinforced-isolation compliance and 1200 V working voltage make this driver a regulatory drop-in for OBC designs targeting global automotive and EVSE certifications. The 2 A drive strength supports 1200 V SiC MOSFETs in TO-247-4 packages.
Recommended
Induction Heating Cooktops and Industrial Heating
Induction heating cooktops (residential 1.5-3.5 kW) and industrial induction heaters (10-500 kW) use the 2ED020I12F2XUMA1 to drive the resonant LLC or series-resonant half-bridge operating at 20-100 kHz on 600 V/1200 V IGBTs. The driver's tight propagation-delay matching between high-side and low-side channels is critical for symmetric duty cycles in resonant topologies; mismatch would otherwise shift the operating point and stress the resonant tank. Integrated DESAT with programmable blanking prevents the catastrophic short-circuit events that occur when the resonant tank is detuned by a missing-load condition or pan-removal event.
Recommended
Welding Power Supplies and Plasma Cutters
Welding inverter power supplies (MIG, TIG, stick) and plasma cutters use the 2ED020I12F2XUMA1 in the primary IGBT full-bridge or half-bridge stage operating from a 600 V DC bus at 20-100 kHz. The reinforced isolation, 1200 V working voltage, and integrated short-circuit protection (DESAT) make this driver well-suited to the harsh electrical environment of welding, where arc strikes produce repeated short-circuit events that the protection circuitry must clear safely without damaging the IGBTs. The Miller clamp is especially valuable during the open-circuit voltage (OCV) phase of MMA welding, where the high dv/dt on the collector node would otherwise cause parasitic gate turn-on in conventional drivers.
Recommended
Recommended Products Summary
Engineering reference data for 2ED020I12F2XUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED020I12-F2 | 2ED020I12F2XUMA2 | 1ED020I12-F2 |
|---|---|---|---|---|
| Package | PG-DSO-36-58 (wide-body DSO-36) | PG-DSO-36-58 (same) | PG-DSO-36-58 (same) | PG-DSO-18 (different, NOT drop-in) |
| Brand | Infineon Technologies | Infineon Technologies (same) | Infineon Technologies (same) | Infineon Technologies (same) |
| Isolation Voltage | 1200 V | 1200 V (same) | 1200 V (same) | 1200 V (same) |
| Drive Current (source/sink) | 2 A | 2 A (same) | 2 A (same) | 2 A (same) |
| Number of Channels | 2 (high-side + low-side capable) | 2 (same) | 2 (same) | 1 (single channel) |
| DESAT Protection | Yes (programmable blanking) | Yes (same) | Yes (same) | Yes (same) |
| Miller Clamp | Yes (active) | Yes (same) | Yes (same) | Yes (same) |
| Isolation Technology | Coreless Transformer (CT) | Coreless Transformer (same) | Coreless Transformer (same) | Coreless Transformer (same) |
| Single-Unit Price (USD) | 7.20 | 7.50 (tube version, slightly higher) | 7.20 (same) | 5.80 (lower, single channel) |
Key Differentiators
- Integrated coreless-transformer isolation eliminates optocouplers (vs UCC21750 (Texas Instruments))
- Active Miller clamp is built into the IC rather than requiring external transistors (vs UCC21750 (Texas Instruments))
- Rail-to-rail gate-drive output supports asymmetric +15 V / -8 V rails for SiC MOSFETs (vs 1ED020I12-F2 (Infineon, single channel))
Design Notes
Maintain at least 8 mm creepage and clearance between the primary-side (pin 1-10, GND1 domain) and the secondary-side (pin 11-36, GND2HS/GND2LS domain) PCB traces to comply with IEC 60747-17 reinforced-isolation requirements at 1200 V working voltage. The wide-body PG-DSO-36-58 package helps, but the PCB layout is the final arbiter. Place the bootstrap capacitor (high-side VCC2HS) and the DESAT blanking capacitor as physically close to the IC pins as possible to minimize parasitic inductance that would otherwise degrade the Miller-clamp effectiveness at high dv/dt.
The PG-DSO-36-58 wide-body package has a typical theta_JA in the 50-70 C/W range on a standard 2-layer 1-oz PCB. At 50 kHz switching with 2 A peak drive into a typical 100 nC IGBT gate charge, the dissipation in the driver IC itself is roughly 50-100 mW per channel. Thermal rise is therefore usually negligible, but the PCB must keep the driver's exposed pad (pin 36) connected to a sufficient copper pour (recommended at least 1 square inch of 2-oz copper tied to the appropriate ground domain) to maintain junction temperature below 125 C in ambient conditions up to 85 C.
Do not enable the DESAT blanking time below 1 microsecond without careful review - shoot-through events in half-bridges typically last 200-500 ns and would otherwise be falsely flagged as faults. Also, the Miller clamp is only effective when its transistor is connected to the gate (not the gate-emitter resistor divider); verify the schematic reference before PCB layout. Finally, when driving SiC MOSFETs with negative gate voltages, ensure VCC2HS/VCC2LS rails can be set to the asymmetric +15 V / -4 V (or similar) required - the driver's UVLO thresholds must be respected for both rails independently.
Compliance Information
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade driver. For automotive traction or OBC applications requiring AEC-Q100, evaluate the automotive-grade variant in the same family. IEC 60747-17 reinforced-isolation compliance verified by Infineon.
