2ED3146MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
MPN: 2ED3146MC12LXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.89 | $289.00 |
| 500 | $2.51 | $1,255.00 |
| 1,000 | $2.18 | $2,180.00 |
2ED3146MC12LXUMA1 Overview
An isolated gate driver is a specialized interface IC that provides both level shifting and reinforced galvanic isolation between a low-voltage control domain (logic-level PWM signals) and a high-voltage power domain (transistor gate terminals). Isolated gate drivers sit hierarchically between gate-driver ICs and optocoupler/transformer-based discrete isolation, enabling compact, reliable, high-CMTI (>100 kV/us) signal transfer for switching power converters.
Key features of the 2ED3146MC12LXUMA1 include integrated dead-time control (DTC) for hardware-managed shoot-through prevention, independent channel operation for low-side/low-side, high-side/high-side, or half-bridge modes, and a 12.5 V UVLO threshold optimized for 600 V/650 V/1700 V/2300 V IGBT-class switches. The PG-DSO-14-71 wide-body package provides the 8 mm creepage required for reinforced isolation per UL 1577 and IEC 60747-17.
The device uses Infineon's coreless transformer (CT) isolation technology, which avoids the aging and Ct-drift issues of optocouplers while achieving >100 kV/us common-mode transient immunity. Internal logic includes input deglitch filters and matched propagation delays across both driver channels to support switching frequencies up to several hundred kHz without duty-cycle distortion.
Typical applications include industrial motor drives (servo, VFD), solar inverters, UPS systems, EV charging stations, induction heating, and welding power supplies where reinforced isolation between control and power stages is mandatory. The 6.5 A peak gate drive is sufficient to switch large modules and discrete IGBTs with 100 nC or larger gate charge.
When designing with this part, place decoupling capacitors as close as possible to VCC1 (pin 1) and VCC2 (pin 14), and route the gate-drive loop area as small as possible to minimize parasitic inductance. The DTC pin must be configured with timing components that match the power-switch turn-off/turn-on delay, or shoot-through can occur across the half-bridge.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2ED3146MC12LXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2ED3146MC12LXUMA2
β Drop-Inπ Reference alternative (not in catalog)
2ED3146MC12L
β Drop-Inπ Reference alternative (not in catalog)
2ED3146MC12LXUMA1 Maximum Ratings & Electrical Characteristics
| Peak Source Output Current | 6 A |
| Peak Sink Output Current | 6.5 A |
| Isolation Voltage (rms) | 5.7 kVrms |
| Number of Channels | 2 (high-side / low-side half-bridge) |
| Configuration | Non-inverting, high and low side |
| Propagation Delay (typ) | 39 ns |
| Channel-to-Channel Skew | 5 ns |
| UVLO Threshold | 12.5 V |
| Isolation Technology | Galvanic (capacitive / coreless transformer) |
| Supported Switch Technologies | IGBT 600/650/1200/1700/2300 V, Si MOSFET, SiC MOSFET |
| Dead-Time Control | Yes (hardware DTC) |
| Package | PG-DSO-14-71 (DSO-14 wide-body) |
| Operating Temperature | -40C to +125C |
| Mounting Type | Surface Mount |
| MSL Level | 3 |
| RoHS Status | Compliant |
| UL Certification | UL 1577 recognized |
2ED3146MC12LXUMA1 Pin Configuration
| Pin 1 | VCC1 β Primary-side supply voltage (3.3 V or 5 V logic domain) |
| Pin 2 | GND1 β Primary-side ground |
| Pin 3 | IN+ β Non-inverting PWM input, channel 1 |
| Pin 4 | IN- β Inverting PWM input, channel 1 (tie to VCC1 if unused) |
| Pin 5 | DTC β Dead-time control programming pin |
| Pin 6 | GND2 β Secondary-side ground (channel 1 return) |
| Pin 7 | OUT1 β Gate drive output, channel 1 (high-side) |
| Pin 8 | VCC2 β Secondary-side supply voltage (15 V typ) |
| Pin 9 | OUT2 β Gate drive output, channel 2 (low-side) |
| Pin 10 | GND2 β Secondary-side ground (channel 2 return) |
| Pin 11 | NC β Not connected (per datasheet) |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
Typical Applications
2ED3146MC12LXUMA1 is suitable for 6 applications: Industrial Motor Drives (VFD / Servo), Solar String Inverters, Uninterruptible Power Supplies (UPS), EV Charging Stations (Level 2 / DC Fast), Induction Heating & Welding Power Supplies, Industrial Welding & Plasma Cutters.
Industrial Motor Drives (VFD / Servo)
The 2ED3146MC12LXUMA1's 5.7 kVrms reinforced isolation and 6.5 A peak gate drive make it ideal for industrial variable-frequency drives and servo amplifiers driving 600 V/1200 V IGBT modules. The hardware dead-time control prevents shoot-through in the half-bridge power stage, while the 39 ns propagation delay preserves PWM accuracy at switching frequencies up to 20 kHz typical for industrial drives. The PG-DSO-14-71 wide-body package provides the 8 mm creepage required by IEC 61800-5-1 for reinforced insulation in motor-drive applications where the power stage is connected directly to the mains.
Recommended
Solar String Inverters
In solar string inverters, the 2ED3146MC12LXUMA1 drives the H-bridge or HERIC topology that converts DC photovoltaic input to grid-compatible AC. The 5.7 kVrms isolation meets IEC 62109 reinforced insulation requirements between the high-voltage DC bus and the low-voltage control board. The 6.5 A peak sink/source current efficiently drives 1200 V IGBTs with >100 nC gate charge, minimizing switching losses at the 16-50 kHz switching frequencies common in transformer-less string inverters. Infineon's capacitive isolation technology provides >100 kV/us CMTI, ensuring reliable operation in the noisy switching environment of a solar inverter.
Recommended
Uninterruptible Power Supplies (UPS)
The 2ED3146MC12LXUMA1 is well-suited for online UPS systems that must provide clean AC power during grid outages. The dual isolated channels drive the IGBT inverter stage that converts battery DC to sine-wave AC for critical loads. The hardware dead-time control simplifies the inverter firmware and prevents catastrophic shoot-through during emergency operation when control timing may be less deterministic. The 6.5 A drive strength supports the larger IGBT modules used in three-phase 10-100 kVA UPS systems, and UL 1577 recognition simplifies safety certification of the end product.
Recommended
EV Charging Stations (Level 2 / DC Fast)
In EV charging stations, the 2ED3146MC12LXUMA1 drives the PFC and DC-DC converter stages that condition mains power for safe battery charging. The 5.7 kVrms reinforced isolation is mandatory per IEC 61851-1 and UL 2202 for the isolation barrier between the HV power stage and the user-accessible control / communication board. The 39 ns low propagation delay and 5 ns channel-to-channel skew maintain accurate PWM control at the high switching frequencies (up to 100 kHz) required for compact, high-power-density chargers. The wide 12.5 V UVLO threshold matches 600 V/1200 V SiC MOSFETs increasingly used in next-generation EV chargers.
Recommended
Induction Heating & Welding Power Supplies
Induction heating and welding inverters use the 2ED3146MC12LXUMA1 to drive the resonant half-bridge that generates the high-frequency AC used for heating or welding. The 6.5 A peak output is necessary to switch large IGBTs at the very high dV/dt required for resonant tank excitation at 30-400 kHz. The hardware dead-time control protects the IGBTs from shoot-through in the resonant zero-voltage switching (ZVS) transitions where control timing is critical. Infineon's coreless-transformer isolation withstands the extreme dV/dt of welding inverter stages without common-mode coupling that would corrupt the gate signals.
Recommended
Industrial Welding & Plasma Cutters
Plasma cutters and welding inverters rely on the 2ED3146MC12LXUMA1's 5.7 kVrms reinforced isolation to protect the low-voltage control electronics from the high-voltage welding arc and plasma torch. The 6.5 A peak gate drive rapidly switches large 1200 V IGBT modules at the tens-of-kHz frequencies typical for arc-stability control. The independent channel operation allows the driver to be configured as either a half-bridge, dual-low-side, or dual-high-side depending on the inverter topology, and the integrated dead-time control eliminates the need for software-based interlocking that could fail under fault conditions.
Recommended
Recommended Products Summary
Engineering reference data for 2ED3146MC12LXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED3146MC12LXUMA2 | 2ED3146MC12L |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-DSO-14-71 | PG-DSO-14-71 - same | PG-DSO-14-71 - same |
| Peak Source Current | 6 A | 6 A | 6 A |
| Peak Sink Current | 6.5 A | 6.5 A | 6.5 A |
| Isolation Voltage (rms) | 5.7 kVrms | 5.7 kVrms | 5.7 kVrms |
| Propagation Delay | 39 ns | 39 ns | 39 ns |
| UVLO Threshold | 12.5 V | 12.5 V | 12.5 V |
| Dead-Time Control | Yes (hardware DTC) | Yes (hardware DTC) | Yes (hardware DTC) |
| Packaging | Tape & Reel | Tape & Reel | Tube |
| Channel Count | 2 (high-side + low-side) | 2 (high-side + low-side) | 2 (high-side + low-side) |
Key Differentiators
- Integrated hardware dead-time control (vs Discrete optocoupler + gate driver combination)
- Coreless transformer (CT) isolation (vs Optocoupler-based gate drivers)
- 5.7 kVrms reinforced isolation in single package (vs Discrete isolation barrier with optocoupler + isolated supply)
Design Notes
Decouple both VCC1 (pin 1) and VCC2 (pin 8) with low-ESR ceramic capacitors placed within 5 mm of the respective supply pins - 100 nF for high-frequency bypass plus a 10 uF bulk capacitor. The PG-DSO-14-71 wide-body package requires a copper pour on the secondary-side ground pins (GND2) to carry the high peak gate-return currents; estimate the gate charge power dissipation as P_gate_drive = Qg * Vg * fsw, which at 100 nC, 15 V, and 50 kHz yields approximately 0.75 W per channel.
Minimize the gate-drive loop area by routing the OUT1/OUT2 traces directly above their corresponding GND2 return paths. The wide-body PG-DSO-14-71 package provides 8 mm of creepage between primary and secondary sides; do not place any traces under the package body that could compromise this isolation barrier. Route the DTC pin trace directly to the timing resistor with minimal parasitic capacitance to preserve the programmed dead-time accuracy.
The IN- pin (pin 4) must be tied to VCC1 (logic high) if not used, not left floating - a floating IN- can cause shoot-through in the input stage. The dead-time control resistor on the DTC pin must be calculated against the actual IGBT turn-off delay, not just the gate-driver propagation delay; a too-small dead-time will allow momentary shoot-through during high-dI/dt switching transitions. Estimated: at a typical 600 V IGBT turn-off delay of 200 ns, the DTC resistor should be selected for at least 300 ns interlock to provide safe margin.
Estimated: At maximum 6.5 A peak and 50 kHz switching, the total gate-drive power loss is approximately 1.5 W across both channels. The PG-DSO-14-71 has a typical theta_JA around 75 C/W on a standard JEDEC 4-layer board, resulting in a 113 C temperature rise at full dissipation - thermal management via copper pour or airflow is recommended in sealed enclosures. The driver's maximum junction temperature of 150 C provides adequate margin for most industrial environments.
Compliance Information
UL 1577 certified for 5.7 kVrms reinforced isolation per Infineon datasheet. RoHS compliant per DigiKey product listing. AEC-Q100 qualification status not explicitly stated in verified data - [DATA_NEEDED: AEC-Q100 grade]. Halogen-free status not stated - [DATA_NEEDED: halogen-free status].
