BUK9240-100A,118 - 100V 33A N-Ch TrenchMOS Logic Level FET | Nexperia
MPN: BUK9240-100A,118 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.81 | $8.10 |
| 100 | $0.68 | $68.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.49 | $490.00 |
| 2,500 | $0.42 | $1,050.00 |
BUK9240-100A,118 Overview
What is a logic-level power MOSFET? A logic-level MOSFET is an enhancement-mode N-channel FET whose gate threshold voltage (typically 1 V to 2.5 V) is low enough to be driven directly by 3.3 V or 5 V microcontroller GPIO pins, eliminating the need for a dedicated gate-driver IC. Power MOSFETs occupy the broader semiconductor category hierarchy: discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> logic-level MOSFETs. TrenchMOS technology (a Nexperia/NXP trademark) reduces RDS(on) per unit silicon area by using a vertical trench gate structure instead of a planar gate, yielding very low on-state resistance in a small DPAK footprint.
Key features of the BUK9240-100A include 175 degrees C maximum junction temperature, AEC-Q101 automotive qualification, low conduction losses due to 33 mOhm RDS(on), and suitability for logic-level gate drive sources (VGS(th) typically 1.5 V to 2.5 V). The device supports repetitive avalanche operation and is rated for high inrush current loads. TrenchMOS process geometry reduces gate charge (Qg) compared to older planar MOSFETs of similar RDS(on), enabling faster switching and lower drive losses.
Architecturally, the part uses an N-channel enhancement structure: with VGS = 0 V the channel is off (normally-off device), and applying VGS greater than VGS(th) creates an inversion layer that conducts current from drain to source. The DPAK (TO-252 equivalent) package provides a low thermal-resistance path through the tab (typical Rth(j-a) around 50 C/W with proper PCB copper heatsink area, or around 1.5 C/W Rth(j-c) when mounted on a large heatsink). Compared with DPAK parts from competitors, the BUK9240-100A is positioned in the 100 V / 33 A sweet spot for 12 V and 24 V automotive subsystems.
Typical applications include automotive transmission control, motor drives (DC brushed and small BLDC), solenoid and lamp drivers, high-side and low-side switching in 12 V/24 V automotive ECU power distribution, and ultra-high-performance power switching in industrial relay-replacement circuits. The 100 V rating provides ample derating margin for 24 V load-dump transients (which can reach 35 V to 40 V on automotive 24 V systems).
When designing with this MOSFET, pay attention to gate-drive voltage: at VGS = 5 V the RDS(on) rises significantly compared to VGS = 10 V (typical logic-level MOSFET behavior), so always confirm the actual RDS(on) at the planned VGS. A small gate-source resistor (10 kOhm to 100 kOhm) is recommended to prevent accidental turn-on from dv/dt-induced Miller current in half-bridge topologies.
This page synthesizes real-time distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical PCB layout guidance that is not duplicated in the stock datasheet.
Drop-in alternatives for BUK9240-100A,118 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BUK9240-100A,118 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET (Enhancement Mode) |
| Technology | TrenchMOS (Logic Level) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 33 A |
| Power Dissipation (PD) at TC | 114 W |
| On-State Resistance (RDS(on)) at VGS=10V | 0.033 Ohm (33 mOhm) |
| Gate Threshold Voltage (VGS(th)) | Logic Level (typically 1.5 V to 2.5 V) |
| Maximum Junction Temperature | 175 C |
| Package | DPAK (SOT-428), 3-pin (2 + Tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified |
| Operating Temperature Range | -55 C to +175 C (TJ) |
| Packaging | Tape & Reel (suffix ",118") |
| RoHS Status | Compliant |
BUK9240-100A,118 Pin Configuration
| Pin 1 | Gate (G) — MOSFET gate input; logic-level drive (VGS(th) typically 1.5 V to 2.5 V) |
| Pin 2 | Source (S) — MOSFET source; reference for gate drive and Kelvin connection point |
| Pin 3 | Drain (D) [Tab] — MOSFET drain; connected to the metal tab for thermal dissipation (primary heat path) |
Safe Operating Area (DC)
Typical Applications
BUK9240-100A,118 is suitable for 6 applications: Automotive Transmission Control, Brushed DC Motor Drive (H-Bridge / Half-Bridge), Automotive Lamp / LED Driver Switching, Solenoid and Valve Driver (Industrial / Process Control), 12 V / 24 V High-Side Load Switch (Power Distribution), DC-DC Converter Power Switch (Auxiliary Buck / Boost).
Automotive Transmission Control
The BUK9240-100A's 100 V VDS rating and 33 A continuous drain current make it a strong fit for automotive transmission solenoid drivers and shift-by-wire actuators. The AEC-Q101 qualification ensures reliability under thermal cycling (-40 C to +125 C ambient) and load-dump transients, while the 33 mOhm RDS(on) at VGS = 10 V minimizes conduction loss during PWM-controlled solenoid actuation. In a typical 12 V transmission ECU, the FET sits between the ECU's 12 V rail and a 2 A to 5 A proportional solenoid; its logic-level VGS(th) allows direct drive from a 5 V micro GPIO with a small gate resistor. Compared with older planar MOSFETs, the TrenchMOS process reduces switching losses at 20 kHz PWM, easing thermal budgets in sealed transmission housings.
Recommended
Brushed DC Motor Drive (H-Bridge / Half-Bridge)
With 33 A continuous drain current and 114 W power dissipation, the BUK9240-100A drives small to medium brushed DC motors (window lifts, seat adjusters, fan motors) directly in half-bridge or H-bridge configurations up to ~20 A continuous per leg. The DPAK package accepts standard PCB copper heatsink pours of 1 to 2 square inches, keeping junction temperature below 150 C at full load. Logic-level VGS(th) allows direct MCU GPIO drive at 5 V, though a small gate driver is recommended for PWM frequencies above 25 kHz to keep Miller-induced turn-on in check. The 100 V VDS withstands back-EMF spikes from 12 V motors with generous margin, eliminating the need for external flyback clamps in many designs.
Recommended
Automotive Lamp / LED Driver Switching
Headlamps, brake lamps, and turn-signal LED drivers using the BUK9240-100A benefit from its 33 A current handling and 100 V avalanche margin for 12 V/24 V automotive rails. A typical application uses the FET as a high-side switch for a 5 A to 15 A LED string, with PWM dimming at 200 Hz to 500 Hz. The TrenchMOS process reduces switching loss enough to allow simple gate-drive schemes without active cooling, while the AEC-Q101 grade ensures long-term reliability under hood or chassis-mounted thermal stress. Compared with relay-based lamp switching, the FET provides silent, arc-free operation and million-cycle PWM endurance.
Recommended
Solenoid and Valve Driver (Industrial / Process Control)
In 24 V industrial solenoid, valve, and relay-replacement circuits, the BUK9240-100A's 100 V VDS comfortably exceeds the 24 V rail with 4x derating margin, while 33 A continuous supports multi-amp solenoid inrush. The logic-level gate allows direct 5 V PLC output drive, eliminating an external gate-driver stage in cost-sensitive designs. The DPAK footprint simplifies PCB layout in DIN-rail-mountable controller modules. Engineers should still add a flyback diode across inductive loads to manage turn-off energy; the FET's avalanche rating EAS handles transient spikes but repetitive avalanche is not recommended.
Recommended
12 V / 24 V High-Side Load Switch (Power Distribution)
As a high-side load switch in automotive or industrial power distribution units (PDUs), the BUK9240-100A replaces mechanical relays with silent, arc-free switching up to 33 A. The 100 V rating provides ample margin for 24 V system load-dump; combined with an external TVS clamp (e.g., SMBJ33CA), the FET delivers robust 24 V ECU power-rail switching. Logic-level VGS(th) drives directly from a body controller MCU GPIO with a 100 kOhm gate-source pull-down for failsafe off-state. The AEC-Q101 grade ensures operation across the full automotive temperature range.
Recommended
DC-DC Converter Power Switch (Auxiliary Buck / Boost)
In auxiliary 12 V to 5 V buck converters or 12 V to 24 V boost converters up to ~10 A output, the BUK9240-100A's 33 mOhm RDS(on) at VGS = 10 V keeps conduction losses below 2% at full load. The DPAK package is footprint-compatible with industry-standard TO-252 layouts, simplifying the PCB. At switching frequencies of 50 kHz to 200 kHz, TrenchMOS gate-charge characteristics minimize driver losses. While not optimized for hard-switching at > 300 kHz, this FET performs well in auxiliary supply rails where conduction loss dominates the total loss budget.
Recommended
Recommended Products Summary
Engineering reference data for BUK9240-100A,118 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BUK9E04-100A,118 | BUK9607-100A,118 | BUK9237-100A,118 | IPD90N10S4L-06 | NVD5865N |
|---|---|---|---|---|---|---|
| Brand | Nexperia | Nexperia | Nexperia | Nexperia | Infineon | onsemi |
| Package | DPAK (SOT-428) | DPAK (SOT-428) - same | DPAK (SOT-428) - same | DPAK (SOT-428) - same | DPAK (TO-252) - same | DPAK (TO-252) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID at TC) | 33 A | 44 A (higher) | 75 A (higher) | 40 A (higher) | 90 A (higher) | 30 A (slightly lower) |
| RDS(on) at VGS=10V | 33 mOhm | 4 mOhm (much lower) | 7 mOhm (much lower) | 37 mOhm (slightly higher) | 10 mOhm (lower) | 50 mOhm (higher) |
| Gate Threshold (VGS(th)) | Logic Level (1.5 V to 2.5 V) | Logic Level | Logic Level | Logic Level | Logic Level (OptiMOS-T) | Logic Level |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes (Infineon automotive) | Yes |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
Key Differentiators
- Logic-level gate drive for direct MCU GPIO control (vs Standard MOSFETs with VGS(th) = 2.5 V to 4.5 V)
- AEC-Q101 automotive qualification (vs Industrial-grade N-channel DPAK MOSFETs)
- TrenchMOS low RDS(on) in DPAK (vs IPD90N10S4L-06 (Infineon OptiMOS, ~10 mOhm))
Design Notes
Estimated: at continuous 33 A drain current into TC with full-case cooling, the DPAK package holds junction temperature at the 175 C rating. However, at TA = 25 C with only 1 sq inch of PCB copper heatsink area (Rth(j-a) ~50 C/W), the practical continuous current is limited to ~3 A (P = I^2 x RDS(on), derate linearly to TJ(max)). For 10 A continuous at 25 C ambient, provide at least 4 sq inches of copper on the drain tab or mount on an external heatsink with thermal compound. Always calculate P_loss = I^2 x RDS(on) x duty_cycle and verify TJ(max) margin.
Lay out the DPAK tab (drain) to a copper pour of at least 1 sq inch on top and bottom PCB layers, stitched with thermal vias (0.3 mm drill, 1.0 mm pitch) to the inner-plane copper heat-sink. Place the gate resistor (typically 10 Ohm to 100 Ohm) and gate-source pull-down resistor (10 kOhm to 100 kOhm) within 5 mm of the gate pin to prevent dv/dt-induced Miller turn-on in half-bridge topologies. Keep the gate-drive loop area small (gate resistor + driver return) to minimize parasitic inductance ringing.
Route the high-current drain and source traces on top copper with a minimum of 2 oz copper weight and 5 mm trace width per 10 A continuous. For switching nodes (half-bridge phase node, switching converter switch node), minimize copper area to limit capacitive coupling to nearby signals. Use a star-ground or Kelvin-source connection (separate source sense trace from the power source trace) when precise current sensing or low-side gate-drive referencing is required. Inductive loads (solenoids, motors) require a flyback/clamp diode in parallel with the FET or across the load.
Do not assume RDS(on) at VGS = 3.3 V equals the VGS = 10 V datasheet value - for logic-level MOSFETs, RDS(on) at low gate drive is typically 2x to 3x higher, increasing conduction losses substantially. Do not exceed VGS(max) of +/- 20 V (verify in the datasheet); driving the gate directly from a 12 V rail is acceptable but a 10 V Zener clamp is recommended for protection. Avoid repetitive avalanche operation - the BUK9240-100A is rated for occasional avalanche but continuous avalanche operation will exceed thermal limits. Always provide a gate-source resistor to keep the FET off during power-up glitches.
Compliance Information
AEC-Q101 qualified (automotive discrete semiconductor standard). RoHS and REACH compliant per Nexperia product page. Lead-free reflow soldering profile per JEDEC J-STD-020.
