CMUDM8004 - 30V 450mA P-Ch SOT-523 MOSFET | Central Semiconductor
MPN: CMUDM8004 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.24 | $24.00 |
| 500 | $0.19 | $95.00 |
| 1,000 | $0.15 | $150.00 |
CMUDM8004 Overview
A MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch and amplifier element that sits at the heart of modern power management. Within the component hierarchy, the CMUDM8004 belongs to the discrete small-signal MOSFET family: transistor -> field-effect transistor (FET) -> MOSFET -> P-channel enhancement-mode small-signal MOSFET. Enhancement-mode P-channel devices turn on when the gate is driven below the source, which simplifies high-side switch topologies.
Key features of the CMUDM8004 include low on-state resistance (low rDS(on)), a low threshold voltage that makes the device logic-level compatible, halogen-free construction by design, and a very small SOT-523 surface mount footprint for dense PCB layouts. The datasheet also identifies a complementary N-channel MOSFET, the CMUDM7004, enabling push-pull and half-bridge style driver stages from a matched pair.
Technically, the DMOS process provides a short, vertical channel structure that yields fast switching transitions, low gate charge behavior for a small-signal part, and stable threshold characteristics. The P-channel polarity allows direct high-side switching without a floating gate driver in low-voltage rails, which is a common simplification in portable and battery-powered electronics.
Typical applications cited in the manufacturer datasheet include load and power switches and power supply converter circuits. The device is also suited to high-side load switching in battery-powered portable equipment, level-shifted driver stages, and pulsed amplifier circuits where fast rise and fall times are required within the 450 mA current envelope.
When designing with this part, verify the gate drive level against the low threshold voltage specification to guarantee full enhancement at the lowest supply rail, and observe the 250 mW dissipation limit to stay within safe operating temperature.
This page synthesizes distributor pricing and availability data, complementary part information, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for CMUDM8004 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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Request AlternativesCMUDM8004 Maximum Ratings & Electrical Characteristics
| Transistor Type | P-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) | 450 mA (Ta) |
| Power Dissipation (PD) | 250 mW (Ta) |
| Threshold Characteristic | Low threshold voltage, logic-level compatible |
| Process Technology | P-Channel DMOS |
| Polarity | P-Channel |
| Operating Mode | Enhancement mode |
| Package | SOT-523 (surface mount) |
| Mounting Type | Surface Mount |
| Marking Code | 84C |
| Complementary Device | CMUDM7004 (N-Channel) |
| Halogen Free | Yes (by design) |
| Applications | Load/Power switches, power supply converter circuits, high-speed pulsed amplifier and driver |
CMUDM8004 Pin Configuration
| Pin 1 | G β Gate - controls the channel; drive below source to turn on (P-channel) |
| Pin 2 | S β Source - connects to the supply rail in high-side switching |
| Pin 3 | D β Drain - connects to the load |
Safe Operating Area (SOT-523, 250 mW limited)
Typical Applications
CMUDM8004 is suitable for 6 applications: High-Side Load Switching, High-Speed Pulsed Amplifier and Driver, Power Supply Converter Circuits, Battery-Powered Portable Devices, Logic-Level Level-Shifting Stages, Industrial Control Signal Switching.
High-Side Load Switching
The CMUDM8004 is well suited to high-side load switching because a P-channel enhancement-mode device turns on by pulling its gate below the source, eliminating the need for a floating gate driver or charge pump that an N-channel high-side switch would require. With a 30 V VDS rating and 450 mA current capability, it can directly switch 5 V, 12 V, and lower 24 V-class rails for peripherals, sensors, and radio modules. Its low threshold voltage permits direct drive from a 3.3 V or 5 V logic GPIO through a small gate resistor. The trade-off is the 250 mW dissipation ceiling: continuous load current must be sized so that I-squared times rDS(on) stays within budget, typically holding continuous current in the low hundreds of milliamps. Halogen-free construction and the tiny SOT-523 footprint make it ideal for dense portable designs.
Recommended
High-Speed Pulsed Amplifier and Driver
Central Semiconductor specifies the CMUDM8004 specifically for high-speed pulsed amplifier and driver applications, a direct consequence of its P-channel DMOS process which provides fast switching transitions and low gate charge for a small-signal device. In pulsed driver service, the part is used to steer current into LED strings, laser or modulator loads, transformers, and capacitive loads where sub-microsecond edges are required. The 450 mA rating refers to the continuous ambient condition; pulse currents within safe operating area can be substantially higher for short duty cycles, making the device effective for pulsed excitation topologies. Designers should minimize gate loop inductance, use a dedicated low-impedance driver or logic gate to charge and discharge the gate quickly, and verify peak junction temperature under the actual pulse train rather than relying on the 250 mW DC dissipation figure alone.
Recommended
Power Supply Converter Circuits
The manufacturer datasheet lists power supply converter circuits among the CMUDM8004's intended applications. In low-power DC-DC converters, the P-channel device serves as the main high-side switch in buck topologies or as a synchronous element and load-switch in linear and hybrid regulator stages. Its low threshold voltage supports gate drive directly from the converter controller's logic-level output, and the DMOS structure delivers the fast switching edges needed to keep switching losses acceptable at typical converter frequencies. Because the 250 mW dissipation limit bounds conduction loss, the CMUDM8004 is best matched to converters in the sub-1 W output range where load currents stay within a few hundred milliamps. Layout discipline - tight input capacitor placement, short gate traces, and a solid ground return - is critical to controlling ringing and EMI in these compact SOT-523 designs.
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Battery-Powered Portable Devices
In battery-powered portable electronics, the CMUDM8004 acts as a power-path and peripheral load switch, disconnecting sleeping subsystems to extend battery life. Its P-channel polarity suits the positive battery rail common in single-cell Li-ion (3.0-4.2 V) and multi-cell alkaline products. The low threshold voltage guarantees full enhancement even at the depleted end of the battery curve, an essential property for reliable disconnect across the full state of charge. Quiescent overhead is essentially zero when off, since an enhancement-mode MOSFET draws no steady gate current. The SOT-523 package minimizes board area and height for thin form factors. The design constraint is the 250 mW dissipation budget: inrush current into bulk capacitance must be managed, either by acceptable transient limits or by adding a series resistor or controlled gate-slew circuit to soft-start the switch.
Recommended
Logic-Level Level-Shifting Stages
Because the CMUDM8004 features low threshold voltage and logic-level compatibility, it functions effectively as a discrete level-shifting and gate-driving element between logic domains and higher-voltage loads. A GPIO operating at 1.8 V, 3.3 V, or 5 V can pull the gate low through a resistor to turn the P-channel device fully on, interfacing small-signal controllers to 12 V or higher actuation rails without an additional driver IC. This simple single-transistor level-shift is widely used for relay coil pre-drivers, indicator LED banks, enable lines on power modules, and buzzer or haptic drivers. Designers should include a pull-up resistor from gate to source so the switch defaults off during controller reset and brownout, and should verify the logic-low output voltage of the driving pin is low enough, relative to the source rail, to exceed the required gate overdrive for the intended load current.
Recommended
Industrial Control Signal Switching
Within industrial control panels and automation I/O modules, the CMUDM8004 provides compact switching for low-current signaling loads such as status LEDs, optocoupler inputs, sensor enable lines, and small relay coil drivers in combination with the appropriate protection. The 30 V rating gives margin over 24 V industrial signaling rails, a common requirement in PLC-adjacent designs. Halogen-free construction supports green-manufacturing procurement specifications increasingly required in industrial supply chains. The SOT-523 footprint allows high channel density on multiplexed I/O boards. When driving inductive loads such as relay or solenoid coils, a freewheeling clamp diode must be added because the small-signal MOSFET body diode alone is not designed to absorb repetitive inductive kickback at 30 V. Derate current at elevated panel ambient temperatures, since the 450 mA and 250 mW ratings assume 25 C.
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Recommended Products Summary
Engineering reference data for CMUDM8004 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CMUDM7004 |
|---|---|---|
| Package | SOT-523 | SOT-523 - same footprint, complementary N-channel (not a substitute) |
| Brand | Central Semiconductor | Central Semiconductor |
| Polarity | P-Channel | N-Channel (complementary) |
| Drain-Source Voltage | 30 V | 30 V class |
| Continuous Drain Current | 450 mA (Ta) | 450 mA class |
| Power Dissipation | 250 mW (Ta) | 250 mW class |
Key Differentiators
- Ultra-compact SOT-523 footprint (vs Standard SOT-23 P-channel MOSFETs)
- Low threshold voltage, logic-level compatible (vs Higher-threshold conventional P-channel MOSFETs)
- Matched complementary partner available (vs CMUDM7004 (N-channel complement))
Design Notes
Estimated: the 250 mW dissipation limit of the SOT-523 package bounds continuous current. With an assumed rDS(on) of a few ohms at full enhancement, conduction loss P = I^2 x rDS(on) must stay under 250 mW at 25 C ambient and be derated further at elevated temperatures. For example, at 200 mA the dissipation must remain below 250 mW, implying rDS(on) under about 6 ohm at that operating point. Always recompute with the actual datasheet rDS(on) at your gate drive voltage, since low gate overdrive substantially raises on-resistance in small-signal DMOS parts.
Place the gate pull-up resistor (gate to source) close to the CMUDM8004 so the switch defaults off during controller reset or brownout. Keep the gate trace short to limit loop inductance and ringing, and place the input decoupling capacitor within a few millimeters of the source-drain path when used in converter circuits. The SOT-523 land pattern is small; follow the Central Semiconductor recommended footprint exactly and avoid excessive reflow dwell to prevent pad lift. Add a series gate resistor of 10-100 ohm to control switching-edge speed and EMI where slew control is needed.
The most frequent failure modes are exceeding the 30 V VDS rating with inductive kickback and exceeding 250 mW with sustained overcurrent. When switching relays or solenoids, add a clamp/freewheel diode - the intrinsic body diode is not rated for repetitive avalanche duty in this small-signal class. Also verify gate drive polarity: this is a P-channel device, so it turns ON when the gate is pulled below the source; wiring it as if it were N-channel is a common prototype error. Never substitute the complementary CMUDM7004 in its place - it is N-channel.
Compliance Information
Supplied as CMUDM8004 TR PBFREE (lead-free) per DigiKey. Manufacturer datasheet states devices are halogen free by design. REACH and conflict minerals declarations not present in retrieved data.