Central Semiconductor

CMUDM8004 - 30V 450mA P-Ch SOT-523 MOSFET | Central Semiconductor

MPN: CMUDM8004 βœ“ Active
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-30 V Vdss 450 mA (Ta) Id SOT-523 (surface mount) Package
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Price updated: 2026-09-13
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CMUDM8004 Overview

The Central Semiconductor CMUDM8004 is a surface mount P-channel enhancement-mode silicon MOSFET rated for 30 V drain-source voltage, 450 mA continuous drain current, and 250 mW power dissipation, housed in the compact SOT-523 (SC-75 style) package. It is manufactured using the P-channel DMOS process and is designed for high-speed pulsed amplifier and driver applications.

A MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch and amplifier element that sits at the heart of modern power management. Within the component hierarchy, the CMUDM8004 belongs to the discrete small-signal MOSFET family: transistor -> field-effect transistor (FET) -> MOSFET -> P-channel enhancement-mode small-signal MOSFET. Enhancement-mode P-channel devices turn on when the gate is driven below the source, which simplifies high-side switch topologies.

Key features of the CMUDM8004 include low on-state resistance (low rDS(on)), a low threshold voltage that makes the device logic-level compatible, halogen-free construction by design, and a very small SOT-523 surface mount footprint for dense PCB layouts. The datasheet also identifies a complementary N-channel MOSFET, the CMUDM7004, enabling push-pull and half-bridge style driver stages from a matched pair.

Technically, the DMOS process provides a short, vertical channel structure that yields fast switching transitions, low gate charge behavior for a small-signal part, and stable threshold characteristics. The P-channel polarity allows direct high-side switching without a floating gate driver in low-voltage rails, which is a common simplification in portable and battery-powered electronics.

Typical applications cited in the manufacturer datasheet include load and power switches and power supply converter circuits. The device is also suited to high-side load switching in battery-powered portable equipment, level-shifted driver stages, and pulsed amplifier circuits where fast rise and fall times are required within the 450 mA current envelope.

When designing with this part, verify the gate drive level against the low threshold voltage specification to guarantee full enhancement at the lowest supply rail, and observe the 250 mW dissipation limit to stay within safe operating temperature.

This page synthesizes distributor pricing and availability data, complementary part information, and practical design notes not found in the manufacturer datasheet alone.

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CMUDM8004 Maximum Ratings & Electrical Characteristics

Transistor Type P-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDS) -30 V
Continuous Drain Current (ID) 450 mA (Ta)
Power Dissipation (PD) 250 mW (Ta)
Threshold Characteristic Low threshold voltage, logic-level compatible
Process Technology P-Channel DMOS
Polarity P-Channel
Operating Mode Enhancement mode
Package SOT-523 (surface mount)
Mounting Type Surface Mount
Marking Code 84C
Complementary Device CMUDM7004 (N-Channel)
Halogen Free Yes (by design)
Applications Load/Power switches, power supply converter circuits, high-speed pulsed amplifier and driver

CMUDM8004 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 G β€” Gate - controls the channel; drive below source to turn on (P-channel)
Pin 2 S β€” Source - connects to the supply rail in high-side switching
Pin 3 D β€” Drain - connects to the load

Safe Operating Area (SOT-523, 250 mW limited)

DC Continuous Operation

Typical Applications

CMUDM8004 is suitable for 6 applications: High-Side Load Switching, High-Speed Pulsed Amplifier and Driver, Power Supply Converter Circuits, Battery-Powered Portable Devices, Logic-Level Level-Shifting Stages, Industrial Control Signal Switching.

⚑

High-Side Load Switching

The CMUDM8004 is well suited to high-side load switching because a P-channel enhancement-mode device turns on by pulling its gate below the source, eliminating the need for a floating gate driver or charge pump that an N-channel high-side switch would require. With a 30 V VDS rating and 450 mA current capability, it can directly switch 5 V, 12 V, and lower 24 V-class rails for peripherals, sensors, and radio modules. Its low threshold voltage permits direct drive from a 3.3 V or 5 V logic GPIO through a small gate resistor. The trade-off is the 250 mW dissipation ceiling: continuous load current must be sized so that I-squared times rDS(on) stays within budget, typically holding continuous current in the low hundreds of milliamps. Halogen-free construction and the tiny SOT-523 footprint make it ideal for dense portable designs.

πŸ”§

High-Speed Pulsed Amplifier and Driver

Central Semiconductor specifies the CMUDM8004 specifically for high-speed pulsed amplifier and driver applications, a direct consequence of its P-channel DMOS process which provides fast switching transitions and low gate charge for a small-signal device. In pulsed driver service, the part is used to steer current into LED strings, laser or modulator loads, transformers, and capacitive loads where sub-microsecond edges are required. The 450 mA rating refers to the continuous ambient condition; pulse currents within safe operating area can be substantially higher for short duty cycles, making the device effective for pulsed excitation topologies. Designers should minimize gate loop inductance, use a dedicated low-impedance driver or logic gate to charge and discharge the gate quickly, and verify peak junction temperature under the actual pulse train rather than relying on the 250 mW DC dissipation figure alone.

πŸ”‹

Power Supply Converter Circuits

The manufacturer datasheet lists power supply converter circuits among the CMUDM8004's intended applications. In low-power DC-DC converters, the P-channel device serves as the main high-side switch in buck topologies or as a synchronous element and load-switch in linear and hybrid regulator stages. Its low threshold voltage supports gate drive directly from the converter controller's logic-level output, and the DMOS structure delivers the fast switching edges needed to keep switching losses acceptable at typical converter frequencies. Because the 250 mW dissipation limit bounds conduction loss, the CMUDM8004 is best matched to converters in the sub-1 W output range where load currents stay within a few hundred milliamps. Layout discipline - tight input capacitor placement, short gate traces, and a solid ground return - is critical to controlling ringing and EMI in these compact SOT-523 designs.

πŸ“±

Battery-Powered Portable Devices

In battery-powered portable electronics, the CMUDM8004 acts as a power-path and peripheral load switch, disconnecting sleeping subsystems to extend battery life. Its P-channel polarity suits the positive battery rail common in single-cell Li-ion (3.0-4.2 V) and multi-cell alkaline products. The low threshold voltage guarantees full enhancement even at the depleted end of the battery curve, an essential property for reliable disconnect across the full state of charge. Quiescent overhead is essentially zero when off, since an enhancement-mode MOSFET draws no steady gate current. The SOT-523 package minimizes board area and height for thin form factors. The design constraint is the 250 mW dissipation budget: inrush current into bulk capacitance must be managed, either by acceptable transient limits or by adding a series resistor or controlled gate-slew circuit to soft-start the switch.

🧩

Logic-Level Level-Shifting Stages

Because the CMUDM8004 features low threshold voltage and logic-level compatibility, it functions effectively as a discrete level-shifting and gate-driving element between logic domains and higher-voltage loads. A GPIO operating at 1.8 V, 3.3 V, or 5 V can pull the gate low through a resistor to turn the P-channel device fully on, interfacing small-signal controllers to 12 V or higher actuation rails without an additional driver IC. This simple single-transistor level-shift is widely used for relay coil pre-drivers, indicator LED banks, enable lines on power modules, and buzzer or haptic drivers. Designers should include a pull-up resistor from gate to source so the switch defaults off during controller reset and brownout, and should verify the logic-low output voltage of the driving pin is low enough, relative to the source rail, to exceed the required gate overdrive for the intended load current.

🏭

Industrial Control Signal Switching

Within industrial control panels and automation I/O modules, the CMUDM8004 provides compact switching for low-current signaling loads such as status LEDs, optocoupler inputs, sensor enable lines, and small relay coil drivers in combination with the appropriate protection. The 30 V rating gives margin over 24 V industrial signaling rails, a common requirement in PLC-adjacent designs. Halogen-free construction supports green-manufacturing procurement specifications increasingly required in industrial supply chains. The SOT-523 footprint allows high channel density on multiplexed I/O boards. When driving inductive loads such as relay or solenoid coils, a freewheeling clamp diode must be added because the small-signal MOSFET body diode alone is not designed to absorb repetitive inductive kickback at 30 V. Derate current at elevated panel ambient temperatures, since the 450 mA and 250 mW ratings assume 25 C.

Recommended Products Summary

CMUDM7004 Complementary N-channel MOSFET for low-side or push-pull stage Used in: High-Side Load Switching, High-Speed Pulsed Amplifier and Driver, Power Supply Converter Circuits, Battery-Powered Portable Devices, Logic-Level Level-Shifting Stages, Industrial Control Signal Switching
What is the CMUDM8004 MOSFET?
The CMUDM8004 is a surface mount P-channel enhancement-mode silicon MOSFET from Central Semiconductor, rated at 30 V drain-source voltage and 450 mA continuous drain current with 250 mW power dissipation. It is built on the P-channel DMOS process and comes in a compact SOT-523 package. According to the manufacturer datasheet, it targets high-speed pulsed amplifier and driver applications, load and power switches, and power supply converter circuits.
What is the drain-source voltage rating of CMUDM8004?
The CMUDM8004 is rated for a maximum drain-source voltage (VDS) of 30 V (P-channel polarity). This rating, per the manufacturer datasheet, applies across the operating temperature range and makes the device suitable for 5 V, 12 V, and lower 24 V-class rails with appropriate margin. Designers should ensure switching transients and inductive spikes stay below the 30 V limit using proper layout and clamp techniques.
How much current can the CMUDM8004 handle?
The CMUDM8004 handles up to 450 mA of continuous drain current at a 25 C ambient temperature, per the Central Semiconductor datasheet. Because the SOT-523 package dissipates a maximum of 250 mW, the practical continuous current is constrained by conduction losses: the current must be derated so that I-squared times rDS(on) remains below 250 mW at the actual ambient temperature. Pulse currents can exceed the DC rating within safe operating limits.
What package does the CMUDM8004 use?
The CMUDM8004 uses the SOT-523 surface mount package (SC-75 style), a three-lead, small-outline plastic package designed for high-density PCBs. According to the manufacturer datasheet, the device is halogen free by design. The standard pinout for SOT-523 MOSFETs places the gate on pin 1, source on pin 2, and drain on pin 3 - verify against the datasheet outline drawing before routing.
What is the price of CMUDM8004?
As of 2026-09-14, the CMUDM8004 TR PBFREE is listed at DigiKey Electronics with quantity-break pricing that typically starts around a few tens of US cents at the 1-piece level and drops further at 100-piece and reel quantities. XAIPART tier pricing: 0.42 USD at qty 1, 0.34 at 10, 0.24 at 100, 0.19 at 500, and 0.15 at 1000. Exact distributor pricing fluctuates; check the live listing before ordering.
Where can I buy CMUDM8004 online?
The CMUDM8004 TR PBFREE can be purchased online from DigiKey Electronics, which lists it as a shippable stock item, and from Mouser Electronics, which hosts the official Central Semiconductor datasheet PDF. Secondary distribution channels include Jotrin Electronics. As of 2026-09-14, DigiKey's listing confirms P-channel, 30 V, 450 mA, 250 mW SOT-523 specification and same-day shipping capability for in-stock reels.
Is CMUDM8004 in stock and what is the lead time?
As of 2026-09-14, DigiKey Electronics lists the CMUDM8004 TR PBFREE with 'ships today' availability, indicating factory stock at the distributor and a lead time of effectively 1-2 business days for standard shipping. Lead times at other distributors such as Mouser and Jotrin vary with their local stock. For large reel volumes, confirm factory lead time with Central Semiconductor or your distributor representative before committing to a production schedule.
What is the difference between CMUDM8004 and CMUDM7004?
The CMUDM8004 and CMUDM7004 are complementary devices, not substitutes: the CMUDM8004 is a P-channel MOSFET while the CMUDM7004 is an N-channel MOSFET. Both are rated 30 V / 450 mA class devices in SOT-523 from Central Semiconductor and are designed to work together in push-pull, half-bridge, and level-shifting stages. According to the manufacturer datasheet, the CMUDM7004 is explicitly identified as the complementary N-channel MOSFET for the CMUDM8004. You cannot directly substitute one for the other.
CMUDM8004 vs generic SOT-23 P-channel MOSFETs - which should I choose?
Choose the CMUDM8004 when board area is at a premium, since SOT-523 occupies roughly half the footprint of a standard SOT-23 package, and when the low threshold voltage and DMOS fast-switching behavior match your driver requirements. Choose a larger SOT-23 part such as an SSM3J-series or IRLML6402-class device if you need lower rDS(on), higher current, or better thermal performance. The CMUDM8004's 450 mA / 250 mW envelope is optimized for small-signal switching, not power delivery.
When should I choose CMUDM8004 over a bigger MOSFET?
Choose the CMUDM8004 when your load current is below roughly 200-300 mA continuous, the bus voltage is 30 V or less, and PCB area or component height is constrained - for example, high-side load switches in battery-powered portable devices. Its low threshold voltage allows direct drive from logic-level GPIO. If your application needs under 50 milliohm on-resistance, multi-ampere current, or significant thermal margin, step up to a larger package such as SOT-23 or SOT-223 instead.
What is the best drop-in replacement for CMUDM8004?
No verified drop-in replacement for the CMUDM8004 was found in the current cross-reference search results as of 2026-09-14. Functionally similar SOT-523/SC-75 P-channel 30 V small-signal MOSFETs exist from other manufacturers, but pin mapping and threshold specifications must be verified against each datasheet before substitution. The nearest in-family device is the complementary CMUDM7004 (N-channel), which is a pair-partner, not a replacement. Always perform FFF (form-fit-function) verification on any candidate substitute.
Where can I download the CMUDM8004 datasheet PDF?
The official CMUDM8004 datasheet PDF is available from Central Semiconductor at my.centralsemi.com/datasheets/CMUDM8004.PDF, and mirrored by Mouser Electronics. The datasheet covers the surface mount P-channel enhancement-mode silicon MOSFET description, SOT-523 case dimensions, maximum ratings, electrical characteristics, and applications guidance. Third-party copies are also hosted on AllDatasheet and AllTransistors, but the manufacturer site should always be treated as the authoritative revision.
What are the key specifications of CMUDM8004 that engineers should know?
Engineers should know these five facts: (1) P-channel enhancement-mode DMOS polarity, turned on by pulling the gate below the source; (2) 30 V maximum drain-source voltage; (3) 450 mA continuous drain current at 25 C ambient; (4) 250 mW maximum power dissipation in the SOT-523 package; (5) low threshold voltage and low rDS(on) for logic-level, high-speed switching. The device is halogen free by design, marked 84C, and has the CMUDM7004 as its N-channel complementary partner. Source: Central Semiconductor datasheet.
Hey Google, what can replace a CMUDM8004?
As of the latest cross-reference data, no exact pin-compatible drop-in replacement is documented for the CMUDM8004. Functionally, any P-channel enhancement-mode MOSFET rated at or above 30 V and 450 mA in an SOT-523/SC-75 package can serve as a candidate, but the gate-source threshold voltage and rDS(on) must be re-verified. Alternatively, a SOT-23 package part with equivalent ratings can be used if the PCB footprint can be modified. Confirm pinout mapping before substitution.
Is CMUDM8004 RoHS and halogen free compliant?
Yes. The CMUDM8004 is supplied as a PBFREE (lead-free) product per the DigiKey listing, and the manufacturer datasheet states the devices are halogen free by design, consistent with RoHS-style restricted-substance requirements. The SOT-523 package is a lead-free surface mount plastic construction suitable for standard reflow soldering profiles. For formal RoHS and REACH certificate documents, request them directly from Central Semiconductor or the distributing dealer, as certificate text was not included in the retrieved data.

Engineering reference data for CMUDM8004 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the CMUDM8004 when you need a P-channel high-side switch in a minimal footprint: load currents up to a few hundred milliamps, bus voltages at or below 30 V, and direct logic-level gate drive from a microcontroller. Its low threshold voltage and DMOS fast switching make it ideal for load switches, pulsed drivers, and sub-1 W converter stages, and the complementary CMUDM7004 covers the N-channel position with matched ratings. Choose a SOT-23 or larger package MOSFET instead if you need lower rDS(on) for power delivery, higher continuous current, or more thermal margin - the CMUDM8004's 250 mW dissipation ceiling is its main limitation. No verified pin-compatible drop-in substitute exists in current cross-reference data, so sole-source risk should be considered; qualify a functional equivalent with FFF verification before committing to high-volume production.

Comparison with Alternatives

Parameter This Product CMUDM7004
Package SOT-523 SOT-523 - same footprint, complementary N-channel (not a substitute)
Brand Central Semiconductor Central Semiconductor
Polarity P-Channel N-Channel (complementary)
Drain-Source Voltage 30 V 30 V class
Continuous Drain Current 450 mA (Ta) 450 mA class
Power Dissipation 250 mW (Ta) 250 mW class

Key Differentiators

  • Ultra-compact SOT-523 footprint (vs Standard SOT-23 P-channel MOSFETs)
  • Low threshold voltage, logic-level compatible (vs Higher-threshold conventional P-channel MOSFETs)
  • Matched complementary partner available (vs CMUDM7004 (N-channel complement))

Design Notes

Estimated: the 250 mW dissipation limit of the SOT-523 package bounds continuous current. With an assumed rDS(on) of a few ohms at full enhancement, conduction loss P = I^2 x rDS(on) must stay under 250 mW at 25 C ambient and be derated further at elevated temperatures. For example, at 200 mA the dissipation must remain below 250 mW, implying rDS(on) under about 6 ohm at that operating point. Always recompute with the actual datasheet rDS(on) at your gate drive voltage, since low gate overdrive substantially raises on-resistance in small-signal DMOS parts.

Place the gate pull-up resistor (gate to source) close to the CMUDM8004 so the switch defaults off during controller reset or brownout. Keep the gate trace short to limit loop inductance and ringing, and place the input decoupling capacitor within a few millimeters of the source-drain path when used in converter circuits. The SOT-523 land pattern is small; follow the Central Semiconductor recommended footprint exactly and avoid excessive reflow dwell to prevent pad lift. Add a series gate resistor of 10-100 ohm to control switching-edge speed and EMI where slew control is needed.

The most frequent failure modes are exceeding the 30 V VDS rating with inductive kickback and exceeding 250 mW with sustained overcurrent. When switching relays or solenoids, add a clamp/freewheel diode - the intrinsic body diode is not rated for repetitive avalanche duty in this small-signal class. Also verify gate drive polarity: this is a P-channel device, so it turns ON when the gate is pulled below the source; wiring it as if it were N-channel is a common prototype error. Never substitute the complementary CMUDM7004 in its place - it is N-channel.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Supplied as CMUDM8004 TR PBFREE (lead-free) per DigiKey. Manufacturer datasheet states devices are halogen free by design. REACH and conflict minerals declarations not present in retrieved data.

Data verified on: 2026-09-14 β€” data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Central Semiconductor CMUDM8004 CMUDM7004 MOSFET P-channel enhancement-mode MOSFET small-signal transistor field-effect transistor DMOS process SOT-523 SC-75 package surface mount RoHS halogen free rDS(on) threshold voltage high-side load switch pulsed amplifier power supply converter marking code 84C DigiKey Electronics Mouser Electronics
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