CSD19534Q5A vs CSD18503Q5A Comparison

Detailed side-by-side comparison of CSD19534Q5A by Texas Instruments and CSD18503Q5A by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ Active

Specification Comparison

Parameter CSD19534Q5A CSD18503Q5A
Brand Texas Instruments Texas Instruments
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.85
FET Type N-Channel —
Technology NexFET (Power MOSFET) NexFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 44 A —
On-Resistance RDS(on) 12.6 mΩ (typ per datasheet description) —
Power Dissipation (Ta) 3.2 W 3.1 W
Power Dissipation (Tc) 63 W 120 W
Package 8-VSONP (5x6 mm) with exposed pad 8-VSONP (DQJ), 5 mm x 6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
MSL Level 1-260C-UNLIM —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Pin Count 8 —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
On-Resistance (RDS(on)) — 4.3 mOhm (3.4 mOhm typical)
Continuous Drain Current (Ta) — 19 A
Continuous Drain Current (Tc) — 100 A
Operating Junction Temperature — -55C to +150C
Configuration — Single
Gate Charge — [DATA_NEEDED: Qg]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Number of Pins — 8

Datasheets & Resources

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